高温退火对AlN外延材料晶体质量的影响  

Influence of High Temperature Annealing on the Crystal Quality of AlN Epitaxial Layers

作　　者：罗伟科[1,2] 王翼 李亮 李传皓[1,2] 张东国[1,2] 杨乾坤 彭大青[1] 李忠辉 LUO Weike;WANG Yi;LI Liang;LI Chuanhao;ZHANG Dongguo;YANG Qiankun;PENG Daqing;LI Zhonghui(Nanjing Electronic Devices Institute,Nanjing,210016,CHN;National Key Laboratory of Solid-state Microwave Devices and Circuits,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016 [2]固态微波器件与电路全国重点实验室,南京210016

出　　处：《固体电子学研究与进展》2024年第2期167-172,共6页Research & Progress of SSE

基　　金：江苏省重点研发计划资助项目(BE2020004);重点实验室基金资助项目(614280303012002)。

摘　　要：采用高温退火技术改善金属有机物化学气相沉积AlN薄膜材料晶体质量。研究发现较低的生长温度下,Al原子迁移能力弱,外延呈岛状生长模式,形成大量的柱状晶粒,晶粒倾斜、扭曲,晶格原子排列混乱,存在大量的位错和层错缺陷;高温退火时晶格发生重构,晶粒合并,位错和层错缺陷减少,晶格排列整齐,晶体质量得到提升。通过优化生长温度和退火温度,获得了高质量的200 nm厚AlN模板,其(002)和(102)面的X射线双晶衍射摇摆曲线半高宽分别为107 arcsec和257 arcsec,位错密度比退火前降低了2~3个数量级。High temperature annealing technology has been applied to improve the crystal quality of AlN epitaxial layers grown by metalorganic chemical vapor deposition in this paper.It is found that surface migration of Al atoms is reduced with the decrease of growth temperature,resulting in island growth mode for AlN growth.Moreover,numbers of misoriented grains,high density of threading dislocations and stacking fault are formed in the AlN films.After annealing,crystal quality is largely improved due to the recrystallization of columnar structure.High crystal quality 200 nm thick AlN templates are obtained by optimizing the growth temperature and annealing temperature,the full widths at half maximum of(002)and(102)plane X‐ray rocking curves of which are 107 arcsec and 257 arcsec,respectively.Threading dislocation density AlN templates is reduced by 2‐3 orders of magnitude after annealing.

关 键 词：高温退火 氮化铝 晶体质量 金属有机物化学气相沉积 

分 类 号：TN304.2[电子电信—物理电子学]