化合物器件高加速温湿度应力(HAST)能力现状研究  

Research on Current Situation of Temperature and Humidity Highly Accelerated Stress Test(HAST)Capability of Compound Semiconductors

作　　者：黄琴琴 石君 HUANG Qinqin;SHI Jun(Chengdu Ganide Technology Co.,Ltd.,Chengdu 610016,China)

机构地区：[1]成都嘉纳海威科技有限责任公司,四川成都610016

出　　处：《现代信息科技》2024年第8期79-82,88,共5页Modern Information Technology

摘　　要：文章基于GaAs pHEMT晶圆工艺现状,根据不同材料特性,从芯片设计、晶圆制程控制、封装材料选择三个维度进行了研究,报告了针对类似材料组合相对复杂的化合物半导体工艺器件在高加速温湿度应力(HAST)能力方面所面临的现状。同时,通过典型案例分析,说明了此类化合物器件在耐湿热能力设计及制程控制上需要注意的关键点,用于类似芯片设计或工艺开发工作进行参考。Based on the current situation of GaAs pHEMT wafer process,this paper studies from three dimensions:chip design,wafer process control,and packaging material selection according to different material characteristics.It reports the current situation faced by compound semiconductors with relatively complex material combinations in terms of temperature and humidity Highly Accelerated Stress Test(HAST)capabilities.Through typical case analysis,the key points that such compound semiconductors need to pay attention to in the design and process control are explained,which can be used for reference in similar chip design or process development work.

关 键 词：化合物半导体 砷化镓 PHEMT HAST 耐湿热能力 

分 类 号：TN386[电子电信—物理电子学]