碳化硅陶瓷的激光改性磨削  

Laser Modified Grinding of Silicon Carbide Ceramics

作　　者：刘伟[1,2] 顾浩 唐都波 刘顺 LIU Wei;GU Hao;TANG Dubo;LIU Shun(School of Mechanical Engineering,Hunan University of Science and Technology,Xiangtan 411201,Hu'nan,China;Hunan Provincial Key Laboratory of High Efficiency and Precision Machining of Difficult-to-cut Material,Hunan University of Science and Technology,Xiangtan 411201,Hu'nan,China)

机构地区：[1]湖南科技大学机电工程学院,湖南湘潭411201 [2]湖南科技大学难加工材料高效精密加工湖南省重点实验室,湖南湘潭411201

出　　处：《机械科学与技术》2024年第4期637-642,共6页Mechanical Science and Technology for Aerospace Engineering

基　　金：国家自然科学基金项目(U23A20634,51505144);湖南省自然科学基金项目(2023JJ30251,2020JJ5178,2020JJ4024);湖南省教育厅科学研究项目(20A202)。

摘　　要：为了实现碳化硅陶瓷的高精加工,激光辐照被引入磨削加工中。本文以碳化硅陶瓷为研究对象,采用激光改性磨削工艺,利用激光辐照对碳化硅陶瓷进行改性处理,进而对碳化硅陶瓷进行磨削试验。与普通磨削进行比较,研究了碳化硅陶瓷试样的磨削力、表面粗糙度、表面形貌和亚表面损伤。实验结果表明,与普通磨削相比,激光改性磨削可以有效降低法向磨削力、切向磨削力、表面粗糙度,最大下降幅度分别为33.91%、37.31%和33.14%。激光改性磨削促使SiC陶瓷在磨削过程中以塑性去除为主,磨削表面规则且光滑;工件亚表面微裂纹较少,亚表面损伤深度小;实现了大磨削深度的塑性去除,提高了SiC陶瓷的磨削质量。In order to realize high-precision machining of SiC ceramics,laser irradiation is introduced into the grinding process.In this paper,SiC ceramics as research material,by using laser modified grinding(LMG)process,and then the grinding experiments of SiC ceramics modified by laser irradiation were carried out.Comparing with the ordinary grinding(OG),the grinding force,surface roughness,surface morphology and subsurface damage of SiC ceramic samples were studied.The experimental results show that LMG can effectively reduce normal grinding force,tangential grinding force and surface roughness,and the maximum decreases are 33.91%,37.31% and 33.14%,respectively.LMG promotes the plastic removal of SiC ceramics in the grinding process,and the grinding surface is regular and smooth.There are fewer micro-cracks on the workpiece subsurface,and the subsurface damage depth is small.The plastic removal with a large grinding depth is realized,and the grinding quality of SiC ceramics is improved.

关 键 词：碳化硅陶瓷 激光改性磨削 磨削力 表面质量 塑性去除 

分 类 号：TG580[金属学及工艺—金属切削加工及机床] TN249[电子电信—物理电子学]