基于DBR增强的850 nm GaAs/AlGaAs单行载流子光电探测器  

DBR-Enhanced 850 nm GaAs/AlGaAs Uni-Traveling-Carrier Photodiode

作　　者：王健[1] 窦志鹏 李光昊 黄晓峰[2] 于千 郝智彪[1] 熊兵[1] 孙长征[1] 韩彦军[1] 汪莱[1] 李洪涛[1] 甘霖[1] 罗毅[1] WANG Jian;DOU Zhipeng;LI Guanghao;HUANG Xiaofeng;YU Qian;HAO Zhibiao;XIONG Bing;SUN Changzheng;HAN Yanjun;WANG Lai;LI Hongtao;GAN Lin;LUO Yi(Beijing National Research Center of Information Science and Technol.,Tsinghua University,Beijing 100084,CHN;Chongqing Optoelectronics Research Institute,Chongqing 400060,CHN)

机构地区：[1]清华大学北京国家信息科学与技术研究中心,北京100084 [2]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2024年第1期25-28,共4页Semiconductor Optoelectronics

基　　金：国家重点研发计划项目(2022YFB2803000);国家自然科学基金项目(62235005,62127814,62225405,61975093,61927811,61991443,61974080);华为-清华大学信息光电子与光学合作项目(20212001822)。

摘　　要：高速850 nm GaAs/AlGaAs面入射型单行载流子光电探测器(PD)是短距离光链路中的重要器件,面临着带宽和响应度之间的相互矛盾。报道了一种基于分布布拉格反射器(DBR)增强的GaAs/AlGaAs单行载流子光电探测器(UTC-PD)。DBR由20个周期的高/低Al组分的Al_(x)Ga_(1-x)As三元合金组成,可以在830~870 nm范围内形成大于0.9的反射。在AlGaAs DBR的增强下,将GaAs吸收层所需的厚度降低到1 040 nm,兼顾PD对光的吸收率和光生载流子的渡越时间。采用双台面、聚合物平面化、共面波导电极结构制作了UTC-PD器件。该器件在850 nm波长、-2 V偏压下具有19.26 GHz的-3 dB带宽和0.492 6 A/W的响应度。GaAs/AlGaAs surface-illuminated uni-traveling carrier(UTC) photodiodes(PDs) are critical devices for short-range optical links.However,a conflict exists between bandwidth and responsiveness.We report a GaAs/AlGaAs UTC-PD enhanced by a distributed Bragg reflector(DBR) that consists of 20 cycles of high/low Al component Al_xGa_(1-x)As and has a reflectance >0.9 in the wavelength range of 830~870 nm.The thickness of the GaAs absorption layer is reduced to 1 040 nm,which compromises the light absorption of the PD and transit time of photogenerated electrons.The UTC-PD device is fabricated with a double-mesas structure,polymer planarization,and a coplanar waveguide electrode.The device has a-3 dB bandwidth of 19.26 GHz,a responsivity of 0.492 6 A/W at a wavelength of 850 nm,and a bias of-2 V.

关 键 词：GAAS ALGAAS 光电探测器 单行载流子 分布布拉格反射器 850 nm波长 

分 类 号：TN929.11[电子电信—通信与信息系统]