高品质磷化铟多晶的HGF法合成研究  

Synthesis of High-quality Indium Phosphide Polycrystal using Horizontal Gradient-freeze Method

作　　者：刘京明[1,2] 赵有文 张成龙[1] 卢伟 杨俊 沈桂英[1] LIU Jingming;ZHAO Youwen;ZHANG Chenglong;LU Wei;YANG Jun;SHEN Guiying(Key Laboratory of Semiconductor Materials Science,Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,CHN;University of Chinese Academy of Sciences,Beijing 100049,CHN;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,CHN)

机构地区：[1]中国科学院半导体研究所中国科学院半导体材料科学重点实验室低维半导体材料与器件北京市重点实验室,北京100083 [2]中国科学院大学,北京100049 [3]中国科学院大学材料科学与光电技术学院,北京100049

出　　处：《半导体光电》2024年第1期101-104,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(62374161)。

摘　　要：用高压水平温度梯度定向结晶技术合成了磷化铟(InP)多晶。分析了不同温度梯度对多晶配比度的影响,结果表明当温度梯度低于4℃/cm时,多晶呈明显富铟状态,配比度在97%以下;当温度梯度在5℃/cm以上时多晶致密、无铟夹杂,达到近化学配比状态,配比度达到99%以上。对多晶样品进行了霍尔测试和辉光放电质谱(GDMS)测试,合成的高配比度磷化铟多晶载流子浓度在8×10^(15)cm^(-3)以下,迁移率在3900 cm~2·V^(-1)·s^(-1)以上,纯度达到99.99999%以上。多晶中的杂质主要有Si,S,Fe,Cu,Zn,As等,分析了杂质的来源及其对材料性能的影响。Indium phosphide(InP) polycrystals were synthesized using the horizontal gradient-freeze method.The influence of different temperature gradients on the ratio of polycrystals was analyzed,The results show that the crystals are indium-rich with a ratio of less than 97% when the temperature gradient is lower than 4 ℃/cm,and the crystals are stoichiometric with a ratio of more than 99% when the temperature gradient is above 5 ℃/cm.The impurities and electrical properties of the polycrystalline samples were analyzed using glow discharge mass spectrometry(GDMS) and Hall tests.The purity of stoichiometric InP polycrystals was greater than 99.999 99%;the carrier concentration was less than 8×10~(15) cm~(-3);the mobility was greater than 3 900 cm~2·V~(-1)·s~(-1).The impurities in the polycrystals primarily included Si,S,Fe,Cu,Zn,and As.The sources of the impurities and their effects on the properties of the materials were analyzed.

关 键 词：磷化铟 多晶 水平温度梯度凝固 杂质 纯度 

分 类 号：TN304.2[电子电信—物理电子学]