红外探测器芯片高可靠性键合工艺研究  

High-reliability Bonding Process of Infrared Detector Chip

作　　者：李峻光 王霄[2,3] 乔俊[2,3] 李鹏 LI Junguang;WANG Xiao;QIAO Jun;LI Peng(Shenyang University of Chemical Technology,Shenyang 110142,CHN;Shenyang Institute of Automation,Chinese Academy of Sciences,Shenyang 110169,CHN;Key Laboratory of Optoelectronic Information Processing,Chinese Academy of Sciences,Shenyang 110169,CHN)

机构地区：[1]沈阳化工大学信息工程学院,沈阳110142 [2]中国科学院沈阳自动化研究所,沈阳110169 [3]中国科学院光电信息处理重点实验室,沈阳110169

出　　处：《半导体光电》2024年第1期117-121,共5页Semiconductor Optoelectronics

基　　金：中国科学院重点实验室基金项目(E2290403G1)。

摘　　要：金丝键合工艺广泛应用于红外探测器的封装环节。实验选用25μm金丝,基于正交试验法,根据键合拉力值确定键合的最佳工艺参数。通过优化超声压力、超声功率、超声时间及接触力等工艺参数组合,改善了键合引线的电气连接性能和连接强度,从而提高芯片系统的信号传输质量。提出的引线键合工艺参数组合适用于红外探测芯片的键合。Gold-wire bonding is widely used in the packaging of infrared detectors.In this study,a 25 μm gold wire was selected to determine the best process parameters for bonding with respect to the tensile value of bonding strength based on the orthogonal experimental method.The combination of the ultrasonic process parameters of pressure,power,and time,with contact force was optimized,to improve electrical connection performance and connection strength of the bonded leads,thereby enhancing the signal transmission quality of the chip system.The combination of the wire bonding process parameters proposed in this study is applicable to the bonding of infrared detection chips.

关 键 词：金丝键合 红外探测器 超声功率 接触力 

分 类 号：TG306[金属学及工艺—金属压力加工]