直拉法单晶硅生长原理、工艺及展望  

Principle,Process and Prospect of Monocrystalline Silicon Growth with Czochralski Method

作　　者：王正省 任永生[1,2] 马文会 吕国强[1] 曾毅[1] 詹曙 陈辉[2] 王哲 WANG Zhengxing;REN Yongsheng;MA Wenhui;LYU Guoqiang;ZENG Yi;ZHAN Shu;CHEN Hui;WANG Zhe(Faculty of Metallurgical and Energy Engineering,Kunming University of Science and Technology,Kunming 650093,China;Department of Materials Engineering,The University of Tokyo,Tokyo 113-8656,Japan;School of Computer and Information,Hefei University of Technology,Hefei 230601,China;State Key Laboratory of Advanced Metallurgy,University of Science and Technology Beijing,Beijing 100083,China)

机构地区：[1]昆明理工大学冶金与能源工程学院,昆明650093 [2]东京大学材料工程学院,东京113-8656 [3]合肥工业大学计算机与信息学院,合肥230601 [4]北京科技大学钢铁冶金新技术国家重点实验室,北京100083

出　　处：《材料导报》2024年第9期1-13,共13页Materials Reports

基　　金：云南省科技厅重大研发计划基金(202103AA080010,202102AB080016);国家自然科学基金青年基金(52104303);云南省科技厅-昆明理工大学创建“双一流”联合基金面上项目(202201BE070001-045);国家自然科学基金云南联合基金项目(U1702251);北京科技大学钢铁冶金新技术国家重点实验室基金项目(KK21-07)。

摘　　要：碳达峰、碳中和理念提出后,太阳能作为一种可再生绿色能源备受关注。单晶硅作为主要的光伏材料,其质量决定着太阳能电池效率的高低,为了降低成本和提高产能,人们对单晶硅提出越来越高的要求。直拉法(CZ法)是单晶硅的主要制备方法,其生产效率高,可实现自动化,直拉单晶硅市场占比超过90%,目前正朝着大尺寸、N型、薄片化、低氧低碳的方向发展。然而随着晶棒尺寸增大,热场变化更加复杂,现有CZ工艺难以满足市场需求。未来降低度电成本仍是晶硅光伏发展的驱动力,应通过技术革新、产业标准化、成本控制等手段推动光伏产业发展。本文介绍了CZ法生长单晶硅的基本原理和生长工艺,分别对缺陷控制、热场优化、氧含量控制等进行了分析,在总结工艺现状和单晶生长特点的基础上对直拉法生长单晶硅的发展方向进行了展望。With the introduction of the concept of peak carbon dioxide emission and carbon neutrality,solar energy as a renewable green energy has attracted much attention.Monocrystalline silicon is main photovoltaic material,and its quality determines the efficiency of solar cells.High-quality monocrystal silicon is required to reduce costs and increase production capacity.Czochralski(CZ)method is main preparation method for monocrystalline silicon,with high production efficiency and automation.The market share of CZ-Si exceeds 90%.At present,it is developing toward large size,N-type,flake,low oxygen,and low carbon.However,as the size of crystal rod increases,the thermal field changes become more complex,and the existing CZ process is difficult to meet the market demand.In the future,reducing the cost of kilowatt-hour electricity is still the driving force for the development of crystalline silicon photovoltaic,and the development of photovoltaic should be promoted through technological innovation,industrial standardization,cost control,and other means.In this paper,the basic principle and growth process of monocrystalline silicon using CZ are first summarized.Defect control,thermal field optimization,and oxygen content control are analyzed.Finally,the process and future prospects of developing monocrystalline silicon using CZ are presented.

关 键 词：直拉法 单晶硅 大尺寸 薄片化 热场 太阳能 

分 类 号：O782[理学—晶体学]