GaN极性和Al组份对AlcGa1−cN/GaN双异质结IMPATTD性能的影响  

Influence of GaN Polarity and Al Composition on the Performance of AlcGa1−cN/GaN Double Hetero-Structural IMPATT Diodes

作　　者：王渊 WANG Yuan(College of Electrical and Electronic Engineering,Wenzhou University,Wenzhou,China 325035)

机构地区：[1]温州大学电气与电子工程学院,浙江温州325035

出　　处：《温州大学学报（自然科学版）》2024年第2期37-48,共12页Journal of Wenzhou University(Natural Science Edition)

摘　　要：GaN基碰撞雪崩渡越时间二极管(IMPATTD)是前景光明的太赫兹波源,具有输出功率高、转换效率高、体积小、集成方便等优点.构建了GaN/AlcGa1-cN/GaN和AlcGa1-cN/GaN/AlcGa1-cN双异质结构(DHS)n+/n/i/p/p+型IMPATTD,通过求解半导体器件基本方程(包括泊松方程、电流密度方程和载流子连续性方程),仿真了工作于大气低损耗窗口频率0.22 THz处的IMPATTD,计算了所设计器件的直流参数(如电场分布、归一化电流密度、击穿电压等)、大信号参数(如端电压、雪崩电流密度、端电流密度、导纳-频率关系、输出功率、转换效率等)和噪声特性参数(如噪声场分布、噪声谱密度和噪声测度等),分析了GaN极性和Al组份对AlcGa1-cN/GaN DHS IMPATTD性能的影响.本文提出了一种优化AlcGa1-cN/GaN DHS IMPATT二极管结构和性能的方法.GaN impact ionization avalanche transit time diode(IMPATTD)is a promising terahertz wave source,which has the advantages of high output power,high conversion efficiency,small size and convenient integration.GaN/AlcGa1-cN/GaN and AlcGa1-cN/GaN/AlcGa1-cN double hetero-structure(DHS)were adopted to construct the n+/n/i/p/p+-type IMPATTD.By solving the basic equations of semiconductor devices(including Poisson equation,current density equation and carrier continuity equation),IMPATTD operating at the atmospheric low loss window frequency of 0.22 THz was simulated.The DC parameters(such as electric field distribution,normalized current density,breakdown voltage,etc.),large signal parameters(such as terminal voltage,avalanche current density,terminal current density,admittance frequency relationship,output power,conversion efficiency,etc.)and noise characteristic parameters(such as noise field,noise spectral density,noise measurement,etc.)of the device were calculated.The influence of GaN polarity and Al composition on the performance of AlcGa1-cN/GaN DHS IMPATTD was analyzed.This paper presents a method to optimize the structure and performance of AlcGa1-cN/GaN DHS IMPATTD.

关 键 词：AlcGa1-cN/GaN双异质结 极性 IMPATT二极管 

分 类 号：TN312.7[电子电信—物理电子学]