HfO_(2)基铁电场效应晶体管  

HfO_(2)-Based Ferroelectric Field Effect Transistor

作　　者：肖金盼 苏铭吉 刘宗芳 Choonghyun Lee XIAO Jinpan;SU Mingji;LIU Zongfang;Choonghyun Lee(China Nanhu Academy of Electronics and Information Technology,Jiaxing 314002,China;School of Information and Electronic Engineering,Zhejiang University,Hangzhou 310058,China)

机构地区：[1]中国电子科技南湖研究院,浙江嘉兴314002 [2]浙江大学信息与电子工程学院,浙江杭州310058

出　　处：《智能物联技术》2023年第5期1-5,9,共6页Technology of Io T& AI

基　　金：科技创新2030—“新一代人工智能”重大项目(No.2020AAA0109000);浙江省“领雁”重点研发计划(No:2022C01098);开发面向存算一体应用的氧化铪基铁电高效多值存储技术研究项目(AFT0121042)。

摘　　要：铁电晶体管作为一种新型的存储器件,由于与CMOS工艺兼容、低功耗等优点,吸引了研究者广泛关注。近年来,Flash、RRAM、FeFET等不同存储器件发展迅速,但都存在一定的微缩问题。大量研究工作表明,HfO_(2)基材料在1 nm厚度时也有微弱的铁电性,有利于器件的微缩,所以近年来对于HfO_(2)基铁电晶体管的研究越来越广泛。本文主要从HfO_(2)基铁电晶体管基本结构、存储机制、工艺制备过程、相关测试方法、应用等方面对HfO_(2)基铁电晶体管存储器进行了综述。As a new type of memory device,ferroelectric transistor has attracted extensive attention of researchers due to its compatibility with CMOS process and low power consumption.In recent years,different memory devices such as Flash,RRAM and FeFET have developed rapidly,but they all have certain scaling problems.A large number of research work has shown that HfO_(2)-based materials also have weak ferroelectricity at a thickness of 1 nm,which is conducive to device scaling.Because of the advantages of device scaling,the research of HfO_(2)-based ferroelectric transistors has become more and more extensive.This paper mainly introduced the HfO_(2)-based ferroelectric transistor memory from the basic structure,storage mechanism,process preparation process,related test methods and application of HfO_(2)-based ferroelectric transistor memory.

关 键 词：HfO_(2)基铁电薄膜 场效应晶体管 制备工艺 存储机制 

分 类 号：TN32[电子电信—物理电子学]