超薄非晶氧化物半导体薄膜的制备及光学带隙调控综合实验设计  

Comprehension Experimental Design for Preparation and Optical Band Gap Control of Ultrathin Amorphous Oxide Semiconductor Films

作　　者：许磊[1] 张新楠 梁茹钰 胡梦真 宋增才 罗世钧[1] XU Lei;ZHANG Xinnan;LIANG Ruyu;HU Mengzhen;SONG Zengcai;LUO Shijun(School of Electronic Engineering,North China University of Water Resources and Electric Power,Zhengzhou 450046,China)

机构地区：[1]华北水利水电大学电子工程学院,郑州450046

出　　处：《实验科学与技术》2024年第2期41-46,共6页Experiment Science and Technology

基　　金：国家自然科学基金(11574083,61904054);教育部产学合作协同育人项目(202102575009,220904090161130);河南省高等教育教学改革研究与实践重点项目(2021SJGLX165);华北水利水电大学教育教学改革研究与实践项目(2021070)。

摘　　要：为提升学生创新素养,通过将科研内容融入实验教学,设计了超薄非晶氧化物半导体薄膜的制备及光学带隙调控实验。采用磁控溅射的方法在石英衬底上制备非晶铟锡氧化物半导体薄膜,通过材料表征研究厚度对薄膜晶体结构、表面形貌和光学特性的影响。实验结果表明,薄膜厚度影响成膜的表面粗糙度,同时薄膜的光学带隙随膜厚增加而减小。该创新实验涵盖了材料制备、表征及机理分析,涉及半导体、材料学、光电子等多个学科领域,且结合实际科研内容,提高了学生的科研积极性,有助于培养学生创新思维,提高理论与实践相结合的能力。In order to enhance students’Innovation literacy and integrated scientific research content into experimental teaching,this work designs“experiments on the preparation and optical band gap control of ultrathin amorphous oxide semiconductor films”.InSnO films were fabricated on quartz substrates by magnetron sputtering,and several characterization methods were used to study the effects of thickness on the crystal structure,surface topography and optical band gap of the films.The results show that the thickness of film affects the surface roughness of the film,and the optical band gap of the films decreases with increasing film thickness.This innovative experiment covers material preparation,characterization and mechanism analysis,involving semiconductor,materials science,optoelectronics disciplines,and combined with actual scientific research content,which improves students’enthusiasm for scientific research,cultivate students’innovative thinking,and improves their ability to combine theory with practice.

关 键 词：光学带隙 铟锡氧化物薄膜 磁控溅射 实验设计 

分 类 号：O484.4[理学—固体物理] G642.423[理学—物理]