化学气相沉积制备高c轴取向的BiOI薄膜  

Preparation of BiOI Films with High c-axis Orientation by Chemical Vapor Deposition

作　　者：徐玉琦 李晴雯 钟敏[1,2] XU Yuqi;LI Qingwen;ZHONG Min(College of Chemical and Material Engineering,Bohai University,Jinzhou 121013,China;Liaoning Key Laboratory of Optoelectronic Functional Materials Testing and Technology,Jinzhou 121013,China)

机构地区：[1]渤海大学化学与材料工程学院,锦州121013 [2]辽宁省光电功能材料与检测重点实验室,锦州121013

出　　处：《人工晶体学报》2024年第5期841-847,共7页Journal of Synthetic Crystals

基　　金：辽宁省教育厅基金(LJKZ1029)。

摘　　要：碘氧化铋(BiOI)由于低毒性、对点缺陷的耐受性和较强的吸光能力而应用在光催化、光伏和光电探测器领域。本文采用化学气相沉积(CVD)方法,以BiI_(3)粉末作为蒸发源,O_(2)/Ar作为反应气体,在钠钙玻璃基底上沉积BiOI薄膜,并通过研究蒸发源温度和沉积时间对薄膜物相和形貌的影响,分析了BiOI薄膜的生长机理。结果表明CVD方法制备的BiOI薄膜属于四方晶系,具有高c轴取向的特点。c轴取向的薄膜平行于基底生长,其结晶性、透过率及缺陷性能等都与蒸发温度和沉积时间密切相关。当蒸发温度为370℃、沉积时间为20 min时,BiOI薄膜的晶化最好,透过率最低,缺陷最少。Bismuth iodide oxide(BiOI)has attracted attention in the fields of photocatalysis,photovoltaics and photodetectors due to its low toxicity,tolerance to point defects,and strong light absorption ability.This article adopts the chemical vapor deposition(CVD)method,using BiI_(3) powder as the evaporation source and O_(2)/Ar as the reaction gas,to obtain high c-axis oriented BiOI films on a soda-lime glass substrate.The growth mechanism of BiOI films was analyzed by studying the effects of evaporation source temperature and deposition time on the phase and morphology of the films.The results indicate that the BiOI films prepared by CVD method belongs to the tetragonal crystal system with a high c-axis orientation.The c-axis oriented thin film grows parallel to the substrate,the evaporation temperature and deposition time have a significant impact on the crystallization,absorption ability and traps of the BiOI films.When the evaporation temperature is 370℃and the deposition time is 20 min,the BiOI film has the best crystallization and the lowest transmittance and traps.

关 键 词：碘氧化铋 光电材料 化学气相沉积 半导体 

分 类 号：O78[理学—晶体学] O484