基于晶格大失配In_(0.58)Ga_(0.42)As材料的高效四结太阳电池  

High Efficiency Four-Junction Solar Cells Based on In_(0.58)Ga_(0.42) As Material with Large Lattice Mismatch

作　　者：王波 周丽华[1] 施祥蕾 郭哲俊 钱勇[1] 张占飞 李彬 孙利杰[1] 王训春[1] Wang Bo;Zhou Lihua;Shi Xianglei;Guo Zhejun;Qian Yong;Zhang Zhanfei;Li Bin;Sun Lijie;Wang Xunchun(State Key Laboratory of Space Power-Sources,Shanghai Institute of Space Power-Sources,Shanghai 200245,China)

机构地区：[1]上海空间电源研究所空间电源全国重点实验室,上海200245

出　　处：《微纳电子技术》2024年第5期52-58,共7页Micronanoelectronic Technology

摘　　要：Ⅲ-Ⅴ族晶格失配多结太阳电池是实现高效太阳电池的主要途径之一,但面临晶格失配材料的高质量生长及其所导致的子电池光电转换效率下降的难题。重点针对晶格失配子电池结构中的(AlGa)InAs缓冲层开展台阶层厚度优化研究,设计了150、200和250 nm三组不同台阶层厚度的缓冲层结构,并完成三组样品的外延生长实验。通过材料测试和子电池电性能测试,系统分析了台阶层厚度对In_(0.58)Ga_(0.42)As材料外延生长质量和子电池电性能的影响。获得了晶格弛豫度为96.71%的In_(0.58)Ga_(0.42)As子电池材料,制备的子电池开路电压达到205.10 mV。在此基础上,结合GaInP/GaAs/In_(0.3)Ga_(0.7)As三结电池研制了晶格失配四结薄膜太阳电池,其光电转换效率达到32.41%(AM0,25℃)。III-V lattice mismatched multi-junction solar cells are one of the main ways to achieve high efficiency solar cells.However,they face the problem of high-quality growth of lattice mismatched materials,which leads to the decrease of photoelectric conversion efficiency of subcells.The optimization of step layer thickness of(AlGa)InAs buffer layer in the lattice mismatched subcell structure was researched.Three groups of buffer layer structures with different thickness(150,200 and 250 nm)of step layer were designed,and the epitaxial growth experiments of three groups of samples were completed.The effects of step layer thickness on the epitaxial growth quality of In_(0.58)Ga_(0.42)As material and the electrical properties of the subcell were systematically analyzed through material testing and subcell electrical properties testing.The In_(0.58)Ga_(0.42)As subcell material with a lattice relaxation of 96.71%is obtained and the open circuit voltage of prepared subcell reaches 205.10 mV.On this basis,the lattice mismatched four-junction thin-film solar cell was fabricated by combining GaInP/GaAs/In_(0.3)Ga_(0.7)As threejunction solar cell,and its photoelectric conversion efficiency reaches 32.41%(AM0,25℃).

关 键 词：四结太阳电池 晶格失配 In_(0.58)Ga_(0.42)As材料 缓冲层 台阶层厚度 

分 类 号：TM914.4[电气工程—电力电子与电力传动]