Crystalline-amorphization-recrystallization structural transition and emergent superconductivity in van der Waals semiconductor SiP under compression  

作　　者：Chunhua Chen Zhenyu Ding Yonghui Zhou Yifang Yuan Nixian Qian Jing Wang Shuyang Wang Ying Zhou Chao An Min Zhang Xuliang Chen Xiaoping Yang Mingliang Tian Zhaorong Yang 

机构地区：[1]Anhui Key Laboratory of Low-Energy Quantum Materials and Devices,High Magnetic Field Laboratory,HFIPS,Chinese Academy of Sciences,Hefei 230031,China [2]Science Island Branch of Graduate School,University of Science and Technology of China,Hefei 230026,China [3]Key Laboratory of Material Physics,Ministry of Education,School of Physics and Microelectronics,Zhengzhou University,Hefei 230601,China [4]Institutes of Physical Science and Information Technology,Anhui University,Zhengzhou 450001,China [5]Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China

出　　处：《Science China(Physics,Mechanics & Astronomy)》2024年第5期115-122,共8页中国科学：物理学、力学、天文学（英文版）

基　　金：supported by the National Key Research and Development Program of China(Grant Nos.2023YFA1406102,and 2022YFA1602603);the National Natural Science Foundation of China(Grant Nos.12374049,12174397,12204420,12204004,12174395,U19A2093,and 12004004);the Natural Science Foundation of Anhui Province(Grant Nos.2308085MA16,and 2308085QA18);the Basic Research Program of the Chinese Academy of Sciences Based on Major Scientific Infrastructures(Grant No.JZHKYPT-2021-08);supported by the Youth Innovation Promotion Association CAS(Grant No.2020443);supported by the High Magnetic Field Laboratory of Anhui Province under Contract No.AHHM-FX-2021-03。

摘　　要：van der Waals(vdW)semiconductors have gained significant attention due to their unique physical properties and promising applications,which are embedded within distinct crystallographic symmetries.Here,we report a pressure-induced crystallineamorphization-recrystallization transition under compression in binary vdW semiconductor SiP.Upon compression to 52 GPa,bulk SiP undergoes a consecutive phase transition from pristine crystalline to amorphous phase,ultimately to recrystallized phase.By employing synchrotron X-ray diffraction experiments in conjunction with high-pressure crystal structure searching techniques,we reveal that the recrystallized Si P hosts a tetragonal structure(space group I4mm)and further transforms partially into a cubic phase(space group Fm3m).Consistently,electrical transport and alternating-current magnetic susceptibility measurements indicate the presence of three superconducting phases,which are embedded in separate crystallographic symmetries—the amorphous,tetragonal,and cubic structures.Furthermore,a high superconducting transition temperature of 12.3 K is observed in its recovered tetragonal phase during decompression.Our findings uncover a novel phase evolution path and elucidate a pressure-engineered structure-property relationship in vdW semiconductor SiP.These results not only offer a new platform to explore the transformation between different structures and functionalities,but also provide new opportunities for the design and exploration of advanced devices based on vdW materials.

关 键 词：RECRYSTALLIZATION transition AMORPHOUS 

分 类 号：O471[理学—半导体物理] O511.3[理学—物理]