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作 者:徐国庆[1] 王仍[1] 陈心恬[1] 乔辉[1] 杨晓阳[1] 储开慧[1] 王大辉[2] 杨鹏翎[2] 李向阳[1] XU Guoqing;WANG Reng;CHEN Xintian;QIAO Hui;YANG Xiaoyang;CHU Kaihui;WANG Dahui;YANG Pengling;LI Xiangyang(Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;Institute of Northwest Nuclear Technology,Xi'an 710024,China)
机构地区:[1]中国科学院上海技术物理研究所,上海200083 [2]西北核技术研究所,陕西西安710024
出 处:《应用光学》2024年第3期549-556,共8页Journal of Applied Optics
基 金:国家自然科学基金重大科研仪器研制项目(12227901)。
摘 要:该文将组分梯度引入HgCdTe探测器结构设计中,提出了一种可以降低PN结附近热激发载流子浓度的方法。建立暗电流机制模型,分析高温下暗电流成份,分析结果表明,降低热激发载流子浓度对结区的影响是提高器件工作温度的关键。利用组分梯度在PN结附近构建不同的电场,不同电场下样品暗电流和噪声电流随温度的变化曲线表明,构建的电场越强,降低结区附近热激发载流子浓度的效果越明显。通过数据分析,提出构建103 V/cm量级的组分梯度内建电场可抑制热激发载流子向结区的扩散运动,有效地降低结区附近热激发载流子浓度。The composition gradient was introduced into the structure design of HgCdTe detector,and a method was proposed to reduce the thermally excited carrier concentration near PN junction.The model of dark current mechanism was established,and the analysis of dark current components at high temperature showed that reducing the influence of the thermally excited carrier concentration on the junction was the key to improve the operating temperature of the detector.Different electric fields were built near the PN junction by using the composition gradient.The curves of dark current and noise of the sample with temperature under different electric fields show that the stronger the electric field is,the more obvious the effect of reducing the thermally excited carrier concentration near the junction.Based on the data analysis,it is proposed that the built-in electric field generated by the composition gradient of 103 V/cm can inhibit the diffusion movement of thermally excited carriers to the junction region,which effectively reduce the concentration of thermally excited carriers near the junction region.
关 键 词:组分梯度内建电场 HgCdTe外延薄膜材料 热激发载流子浓度 暗电流 噪声电流
分 类 号:TN215[电子电信—物理电子学]
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