基于自适应偏置的无片外电容LDO设计  

Design of capacitor-less low-dropout(LDO)linear regulator based on adaptive biasing circuit

作　　者：谢雷婧 张家豪 XIE Leijing;ZHANG Jiahao(School of Microelectronics,Shanghai University,Shanghai200444,China;Shanghai Mtrix Technology Co.,Shanghai201899,China)

机构地区：[1]上海大学微电子学院,上海200444 [2]上海矩智科技有限公司,上海201899

出　　处：《电子元件与材料》2024年第4期468-473,共6页Electronic Components And Materials

基　　金：国家重点研发计划资助(2021YFB3200600)。

摘　　要：提出了一种无片外电容低压差线性稳压器(LDO),该稳压器采用有源频率补偿(AFC)电路和自适应偏置电路在宽负载范围内实现快速瞬态响应。有源频率补偿(AFC)电路采用双环路微分器结构,不仅有效减小了片上补偿电容的面积,而且提高了整体电路的瞬态响应。采用源极跟随器结构实现的自适应偏置电路用于有源频率补偿电路的偏置,进一步改善了LDO的瞬态响应。电路采用SMIC 0.18μm标准CMOS工艺制造,有效芯片面积为0.038 mm^(2)。仿真结果表明,在200 mV压差下,最大输出电流为150 mA,最大负载电容为100 pF。在边沿时间为100 ns的最大负载电流变化时,过冲和下冲电压分别为185 mV和405 mV,电路恢复时间分别为0.45μs和0.2μs。This paper presented a capacitor-less low-dropout(LDO)linear regulator circuit,which utilized active frequency compensation(AFC)circuit together with adaptive biasing circuit to achieve fast transient response over a wide load range.The active frequency compensation(AFC)circuit adopted a dual-loop differentiator structure,which not only effectively reduced the area of the on-chip compensation capacitor,but also improved the transient response of the overall circuit.The adaptive biasing circuit with the source follower structure was used as the bias for the active frequency compensation circuit.It further improved the transient response of the linear regulator circuit.The capacitor-less LDO was fabricated using the SMIC 0.18μm standard CMOS process with an effective die area of 0.038 mm^(2).The simulation results show that a maximum output current of 150 mA is achieved at a dropout voltage of 200 mV,and the maximum load capacitance is 100 pF.With a maximum load current change over an edge time of 100 ns,the overshoot and undershoot voltages are 185 mV and 405 mV,respectively,and the circuit settling time are 0.45μs and 0.2μs,respectively.

关 键 词：无片外电容 有源频率补偿 源随器 自适应偏置 快速瞬态响应 

分 类 号：TN432[电子电信—微电子学与固体电子学]