MOCVD生长的中红外高功率量子级联激光器  

Mid-infrared High-power Quantum Cascade Laser Grown by MOCVD

作　　者：杨鹏昌 李曼 孙永强 程凤敏 翟慎强[1] 刘峰奇[1] 张锦川[1] YANG Pengchang;LI Man;SUN Yongqiang;CHENG Fengmin;ZHAI Shenqiang;LIU Fengqi;ZHANG Jinchuan(Laboratory of Solid-State Optoelectronics Information Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China;National Key Laboratory of Electromagnetic Space Security,Tianjin 300308,China)

机构地区：[1]中国科学院半导体研究所固态光电信息重点实验室,北京100083 [2]中国科学院大学材料科学与光电技术学院,北京100049 [3]电磁空间安全全国重点实验室,天津300308

出　　处：《发光学报》2024年第5期794-799,共6页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61991430,62235016,12393830,62327813)。

摘　　要：量子级联激光器(QCL)是中远红外波段的优质光源,具有体积小、重量轻、电光转化效率高等诸多优势,在传感、通信和国防等领域有重要的应用前景。金属有机物化学气相沉积(MOCVD)技术作为更高效的外延方式,应发展适用于QCL的MOCVD外延生长技术以满足快速增长的市场需求。本文报道了全结构由MOCVD技术外延的QCL,通过将传统的“双声子共振”有源区结构修订为“单声子共振结合连续态抽取”结构,减少了电子的热逃逸,改善了器件的温度特性。针对该结构,进一步改变了有源区的掺杂浓度,并对比了不同掺杂浓度对器件性能的影响。腔长8 mm、平均脊宽约6.7μm的较高掺杂有源区器件在20℃下连续输出功率达3.43 W,中心波长约4.6μm,电光转化效率达13.1%;8 mm腔长的较低掺杂有源区器件在20℃下连续输出功率达2.73 W,中心波长约4.5μm,阈值电流仅0.56 A,峰值电光转化效率达15.6%。器件的输出功率和电光转化效率较之前文献报道的MOCVD制备的QCL有明显提高。该结果表明,MOCVD完全具备生长高功率QCL的能力,这对推动QCL的技术进步具有重要意义。Quantum cascade laser(QCL)is a good laser source in the mid-infrared and far infrared spectrum,which has many advantages such as small size,light weight and high wall plug efficiency.It has important application prospects in sensing,communication and national defense.Metal-organic chemical vapor deposition(MOCVD)technology,as a more efficient epitaxy method,and MOCVD epitaxy growth technology suitable for QCL should be developed to meet the rapidly growing market demand.This paper reported a QCL with full structure epitaxial by MOCVD technology.By modifying the traditional“double-phonon resonant”to“single-phonon continuum depopulation”active region structure,the temperature characteristics of the device are improved and heat escape of electrons are reduced.According to this active region strcture,the doping concentration in the active region is changed to compare the influence of different doping concentrations on the performance of the device.The higher doped active region device with a cavity length of 8 mm and an average ridge width of about 6.7μm has an optical power of 3.43 W,a central wavelength of about 4.6μm,and a wall plug efficiency of 13.1%with continuous-wave mode at 20℃.The lower doped active region device with a cavity length of 8 mm has an optical power of 2.73 W,a central wavelength of about 4.5μm,a threshold current of only 0.56 A,and a peak wall plug efficiency of 15.6%with continuous-wave mode at 20℃.The output power and wall plug efficiency of devices are significantly improved compared with the QCL epitaxial MOCVD reported in previous articles.The results show that MOCVD technology is fully capable of growing high-power QCL,which is of great significance to promote the technological progress of QCLs.

关 键 词：量子级联激光器 中红外 高功率 金属有机物化学气相沉积 

分 类 号：TN248[电子电信—物理电子学]