无电荷层InGaAs/Si雪崩光电探测器的优化设计  

Optimal Design of Charge-Free Layer InGaAs/Si Avalanche Photodetector

作　　者：张娟 姚儿 柯少颖 Zhang Juan;Yao Er;Ke Shaoying(Key Laboratory of Light Field Manipulation and System Integration Applications in Fujian Province,College of Physics and Information Engineering,Minnan Normal University,Zhangzhou 363000,Fujian,China)

机构地区：[1]闽南师范大学物理与信息工程学院光场调控及其系统集成应用福建省高校重点实验室,福建漳州363000

出　　处：《光学学报》2024年第5期19-28,共10页Acta Optica Sinica

摘　　要：目前,在近红外波段中普遍采用InGaAs/InP雪崩光电二极管(APD),但这类APD存在增益带宽积小和等效噪声高等问题,而InGaAs/Si APD采用电子、空穴离化系数极低的Si材料作为倍增层,在一定程度解决了上述问题,但其制造过程涉及Si电荷层的离子注入和高温退火激活,该过程工艺复杂、杂质分布不均匀、成本高。因此,本研究采用刻蚀技术在Si倍增层内制备凹槽环,并在凹槽环内填充不同介质对InGaAs层及Si层内的电场进行调控,构建无电荷层InGaAs/Si APD器件模型。结果表明,在凹槽环内填充空气或SiO2可获得高性能的InGaAs/Si APD。该研究结果可为后续研制工艺简单、性能稳定、低噪声的InGaAs/Si APD提供理论指导。Objective InGaAs/Si avalanche photodiode(APD)employs Si materials with extremely low electron hole ionization coefficients as the multiplication layer,which to some extent solves the problem of high equivalent noise.However,its manufacturing involves ion implantation of Si charge layer and high-temperature annealing activation,which features a complex process,uneven impurities distribution,and high cost.We propose the utilization of etching technology to prepare groove rings in the Si multiplication layer and fill different media in the groove rings to modulate the electric field in the InGaAs layer and Si layer,thus building a charge-free layer InGaAs/Si APD device model.The results indicate that filling the groove ring with air or SiO_(2) can achieve high-performance InGaAs/Si APD.Finally,theoretical guidance can be provided for the subsequent development of InGaAs/Si APD with simple processes,stable performance,and low noise.Methods We propose to adopt etching technology to prepare a groove ring within the Si multiplication layer and fill different media inside the groove ring to modulate the electric field in the InGaAs layer and Si layer,which helps build a charge-free layer InGaAs/Si APD device model.Firstly,the changes in APD optical and dark current with different media are simulated.The changes in recombination rate and carrier concentration are simulated to explore the reasons for the changes in optical current.Secondly,the energy band changes of the APD are simulated to further understand the reasons for electron concentration changes.Thirdly,the changes of charge concentration,impact ionization rate,electric field,and other parameters with different media are simulated.Finally,the gain,bandwidth,and gain-bandwidth product of APD are simulated,and a comparison of different media shows that filling with the air can yield the best device performance.Results and Discussions The overall trend of optical current and dark current decreases with the increasing dielectric constant of the medium(Fig.2).As the d

关 键 词：探测器 雪崩光电二极管 增益带宽积 电荷层 凹槽环 

分 类 号：TN315[电子电信—物理电子学]