不同封装结构SiC MOSFET的开关振荡分析  

Switching Oscillation Analysis of SiC MOSFET With Different Packaging Structures

作　　者：欧宏 李伟邦 方玉鑫 花清源 OU Hong;LI Wei-bang;FANG Yu-xin;HUA Qing-yuan(NARI Group Co.,Ltd.(State Grid Electric Power Research Institute Co.,Ltd.),Nanjing 211106,China)

机构地区：[1]南瑞集团有限公司(国网电力科学研究院有限公司),江苏南京211106 [2]南京南瑞半导体有限公司,江苏南京211100

出　　处：《电力电子技术》2024年第5期138-140,共3页Power Electronics

摘　　要：此处分析了不同封装结构碳化硅金属-氧化物半导体场效应晶体管(SiC MOSFET)在开关过程中振荡的产生原因和影响因素。首先建立简化电路模型,准确计算出开关稳态后电压振荡的时域表达式,该电路模型考虑了器件的相关性能参数、器件和电路中的寄生参数。其次通过Matlab软件对模型中的时域表达式进行波形拟合。最后搭建了双脉冲测试平台,实验验证了模型的精确性,也具体量化了不同参数对开关振荡的影响。The causes and influencing factors of oscillation in silicon carbide metal-oxide semiconductor field effect transistor(SiC MOSFET)with different packaging structures during the switching process are analyzed.Firstly,a simplified circuit model is established to accurately calculate the time-domain expression of voltage oscillation after the switch is in stable state.This circuit model considers the relevant performance parameters of the device,as well as parasitic parameters in the device and circuit.Secondly,waveform ftting is performed on the time-domain expressions in the model using Matlab software.Finally,a double-pulse test plaform is built to verify the accuracy of the model and quantify the effect of different parameters on the switching oscillation.

关 键 词：晶体管 开关振荡 寄生参数 电路模型 

分 类 号：TN32[电子电信—物理电子学]