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作 者:陈姜龙 王曾晖 CHEN Jianglong;WANG Zenghui(Institute of Fundamental and Frontier Sciences,University of Electronic Science and Technology of China,Chengdu 611731,China)
机构地区:[1]电子科技大学基础与前沿研究院,成都611731
出 处:《电子科技大学学报》2024年第3期345-351,共7页Journal of University of Electronic Science and Technology of China
基 金:四川省科技厅四川省青年科技创新研究团队项目(2021JDTD0028)。
摘 要:传统电子器件主要由硅基等无机半导体材料以及硬质高分子绝缘衬底材料组成,是现有电子技术的基础。虽然传统电子技术已经发展成熟,但由于材料的限制,导致在柔性电子领域方面,其应用尚存在一定的局限性。而二维材料拥有高结晶性、近乎完美的晶格结构、原子级的厚度与高的机械拉伸强度,并且表现出优异的电荷传输性质,使其在柔性电子领域具有应用前景。该文利用石墨烯、二硫化钼与六方氮化硼优异的机械性能,采取机械剥离法与干法转移,制备基于二硫化钼的场效应晶体管,并采取自主搭建的柔性测试平台,测试了器件的柔性电学性能。测试结果表明,设计的二维异质结晶体管在静态测试条件下,电学性能只有微小变化;但在动态测试条件下,由于层与层之间的范德瓦尔力太小,层与层之间发生滑动或位移,使得器件的电学性能出现较大变化。Conventional electronic devices are mainly composed of inorganic semiconductor materials such as silicon-based and rigid polymer insulating substrate materials,which are the basis of existing electronic technology.Although the traditional electronic technology has been developed,but due to the limitations of the material,resulting in the field of flexible electronics,its application still exists in a certain limit.Two-dimensional materials have high crystallinity,near-perfect lattice structure,atomic-level thickness and high mechanical tensile strength,and exhibit excellent charge-transfer properties,making them promising for applications in the field of flexible electronics.The paper takes advantage of the excellent mechanical properties of graphene,molybdenum disulfide and hexagonal boron nitride to prepare molybdenum disulfide-based field effect transistors by adopting mechanical exfoliation method and dry transfer.A self-built flexible test platform is used to test the flexible electrical performance of the device.The test results show that the designed two-dimensional heterojunction transistor has only a small change in electrical properties under static test conditions;however,under dynamic test conditions,due to the too small van der Waals force between layers,the sliding or displacement between layers makes the electrical properties of the device change significantly.
分 类 号:TN386.2[电子电信—物理电子学]
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