基于炭/炭复合材料加工余料制备碳化硅粉末的组织及性能  

Fabrication of silicon carbide powders prepared from C/C composite processing residues and its microstructure and properties

作　　者：喻文瑞 张福勤[1] YU Wenrui;ZHANG Fuqin(Powder Metallurgy Research Institute,Central South University,Changsha 410083,China)

机构地区：[1]中南大学粉末冶金研究院,长沙410083

出　　处：《粉末冶金材料科学与工程》2024年第2期125-132,共8页Materials Science and Engineering of Powder Metallurgy

摘　　要：以炭/炭复合材料加工余料为碳源,与硅粉充分混合,通过高温合成法制备单晶生长用碳化硅粉末,并对其显微组织和表面性能进行研究。结果表明:制备出的碳化硅粉末晶型为β-SiC,部分继承了炭/炭复合材料加工余料的管槽状、脊状结构。在拉曼光谱中,该粉末的折叠横光与折叠纵光的半峰全宽之比为0.709,其相对纯度高于以石墨粉为碳源同工艺制备的碳化硅粉末。该碳化硅粉末具有多孔特征,比表面积为25.7426 m^(2)/g,可用于物理气相传输单晶生长工艺,且已初步验证其可行性。Using C/C composite processing residue as a carbon source and thoroughly mixing with silicon powder,silicon carbide powder for single crystal growth was prepared by high-temperature synthesis method.The microstructure and surface properties of silicon carbide powder were studied.The results indicate that the crystal form of the prepared silicon carbide powder isβ-SiC,and the powder partially inherits the tubular and ridge-like structures of C/C composite processing residues.In Raman spectra,the ratio of the full width at half maximum of the folded transverse optic to the folded longitudinal optic of the powder is 0.709,and its relative purity is higher than that of silicon carbide powder prepared by the same process using graphite powder as the carbon source.The silicon carbide powder has porous characteristics with a specific surface area of 25.7426 m^(2)/g,and can be used for physical vapor transport single crystal growth process,furthermore,its feasibility has been preliminarily verified.

关 键 词：高温合成法 单晶生长 碳化硅粉末 物理气相传输 炭/炭复合材料 

分 类 号：TQ163.4[化学工程—高温制品工业] TB383.3[一般工业技术—材料科学与工程]