高密度电容器件的制备及其可靠性  

Preparation and Reliability of High Capacitance Density Capacitor

作　　者：商庆杰[1] 王敬轩[1] 董春晖 宋洁晶[1] 杨志[1] SHANG Qingjie;WANG Jingxuan;DONG Chunhui;SONG Jiejing;YANG Zhi(The 13th Research Institute of CETC,Shijiazhuang 050000,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050000

出　　处：《电子工艺技术》2024年第3期13-16,共4页Electronics Process Technology

摘　　要：介绍了一种基于微机械加工技术(MicroElectronMechanical System,MEMS)的硅基高密度电容芯片的制备方法。该电容芯片采用了深孔刻蚀、介质淀积生长以及原位掺杂多晶硅等工艺技术,实现了高击穿电压(50V@1μA)、高电容密度(38.8~39.5nF/mm^(2))的电容芯片制备。A manufacturing technology of high capacitance density capacitor based on micro-electron-mechanical system technology is introduced.The deep trench etching,dielectric depositing and in-situ doped poly silicon technologies are applied,and the capacitor chip with high breakdown voltage(50 V@1µA leakage current)and high capacitance density(38.8~39.5 nF/mm^(2))is achieved.

关 键 词：微系统芯片 高密度电容 深孔刻蚀 原位掺杂多晶硅 

分 类 号：TN304[电子电信—物理电子学]