MOSFET互补传输管导致传输信号失真的因素  

Factors Causing Transmission Signal Distortion in MOSFET Complementary Transmission Gate

作　　者：吕政泽 魏海龙[1] 武琪 LYU Zhengze;WEI Hailong;WU Qi(Xi’an Microelectronics Technology Institute,Xi’an 710054,China)

机构地区：[1]西安微电子技术研究所,西安710054

出　　处：《电子工艺技术》2024年第3期37-41,共5页Electronics Process Technology

摘　　要：互补传输管结构广泛用于各种参与信号处理的电路中,但在信号传输过程中会引入信号失真。为研究影响信号传输失真的因素,对MOSFET的高阶效应进行分析,建立MATLAB模型对每种高阶效应的影响进行研究。研究得到:MOSFET高阶效应导致了互补传输管电路导通电阻的非理想性。互补传输管电路导通电阻的非理想性是导致被传输信号出现失真的主要因素。The complementary transmission gate structure is widely used in various circuits involved in signal processing,but it introduces signal distortion during signal transmission.In order to study the factors that affect the signal transmission distortion,the high-order effect of MOSFET is analyzed and the influence of MATLAB model on each high-order effect is studied.The results show that the high order effect of MOSFET results in the non-ideal on-resistance of the complementary transmission gate circuit.The non-ideality of the on-resistance of the complementary transmission gate circuit is the main factor leading to the distortion of the transmitted signal.

关 键 词：互补传输管 导通电阻 信号失真 MOSFET高阶效应 MATLAB建模 

分 类 号：TN43[电子电信—微电子学与固体电子学]