超快激光垂直改质SiC单晶材料的技术  

Vertical Modification Process by Ultrafast Laser for SiC Single Crystal Materials

作　　者：张红梅 胡北辰 张志耀 牛奔 ZHANG Hongmei;HU Beichen;ZHANG Zhiyao;NIU Ben(The 2nd Research Institute of CETC,Taiyuan 030024,China)

机构地区：[1]中国电子科技集团公司第二研究所,太原030024

出　　处：《电子工艺技术》2024年第3期42-45,共4页Electronics Process Technology

基　　金：国家重点研发计划项目(2023YFB4606300);科工局XX科研项目(JCKY2022210C006);山西省重大专项“揭榜挂帅”项目(202201030201007)。

摘　　要：高效、低损耗SiC晶片加工技术一直是各生产厂家积极研究的高端加工技术。主要研究了采用超快激光垂直改质SiC单晶材料的加工工艺,实现了晶体的切片,大幅提高材料利用率,降低衬底成本。The high-efficiency and low-loss SiC wafer processing technology has always been a high-end processing technology actively researched by various manufacturers.The vertical modification process by ultrafast laser of SiC single crystal materials is researched,and the crystal slicing is achieved is studied,which significantly improve material utilization and reduce substrate costs.

关 键 词：超快激光 垂直改质 SIC 

分 类 号：TN305[电子电信—物理电子学]