基于8英寸的碳化硅单晶生长炉技术  

Technology of 8-inch Silicon Carbide Single Crystal Growth Furnace

作　　者：靳丽岩 王毅 王宏杰 武昕彤 郭帝江 师开鹏 JIN Liyan;WANG Yi;WANG Hongjie;WU Xintong;GUO Dijiang;SHI Kaipeng(The 2nd Research Institute of CETC,Taiyuan 030024,China)

机构地区：[1]中国电子科技集团公司第二研究所,太原030024

出　　处：《电子工艺技术》2024年第3期46-49,62,共5页Electronics Process Technology

摘　　要：碳化硅是制作高温、高频、大功率以及高压器件的理想材料之一。为提高生产效率并降低成本,大尺寸碳化硅衬底的制备是重要发展方向。针对8英寸碳化硅单晶生长的工艺需求,分析了碳化硅物理气相输运法生长机理,研究了碳化硅单晶生长炉的加热系统、坩埚旋转、工艺参数控制技术,通过热场模拟仿真分析和工艺试验,成功制备生长了8英寸晶体。Silicon carbide is one of the ideal materials for producing high-temperature,high-frequency,high-power,and high-voltage devices.In order to improve production efficiency and reduce costs,the preparation technology of large-sized silicon carbide substrate is an important development direction.According to the process requirements for the growth of 8-inch silicon carbide single crystals,the growth mechanism of silicon carbide physical vapor transport method is analyzed,and the key technologies such as heating system,crucible rotation,and process parameter control of the silicon carbide single crystal growth furnace are studied.Through thermalfield simulation analysis and process experiments,the effect of growing 8-inch crystals is achieved.

关 键 词：碳化硅 8英寸 物理气相输运 单晶生长炉 

分 类 号：TN304[电子电信—物理电子学]