基于GaAs E/D PHEMT工艺的Ku波段双通道幅相控制多功能芯片  

A Ku-Band Dual-Channel Amplitude and Phase Control Multi-Function Chip Based on GaAs E/D PHEMT Process

作　　者：徐伟[1] 赵子润 刘会东[1] 李远鹏[1] Xu Wei;Zhao Zirun;Liu Huidong;Li Yuanpeng(The 13^(th)Research Institute,CETC,Shjiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2024年第6期575-579,588,共6页Semiconductor Technology

摘　　要：基于GaAs增强/耗尽型赝配高电子迁移率晶体管(E/D PHEMT)工艺设计了一款14~18 GHz的双通道多功能芯片。芯片集成了单刀双掷(SPDT)开关、6 bit数控移相器、4 bit数控衰减器和增益补偿放大器。采用正压控制开关以减小控制位数;优化移相、衰减和放大等电路拓扑结构,以获得良好的幅相特性;采用紧凑布局、双通道对称的版图设计,以实现小尺寸和高性能。测试结果表明,+5 V电压下,接收通道增益大于3 dB,1 dB压缩点输出功率大于8 dBm;发射通道增益大于1 dB,1 dB压缩点输出功率大于2 dBm;64态移相均方根误差小于2.5°,16态衰减均方根误差小于0.3 dB,芯片尺寸为3.90 mm×2.25 mm。该多功能芯片可实现对射频信号幅度和相位的高精度控制,可广泛应用于微波收发模块。A 14-18 GHz dual-channel multi-function chip was designed based on GaAs enhancement and depletion pseudomorphic high electron mobility transistor(E/D PHEMT)process.The chip integrated a single-pole-double-throw(SPDT)switch,a 6 bit digital phase shifter,a 4 bit digital attenuator and a gain compensation amplifier.Positive voltage controlled switch was used to reduce the number of data bits.A topology was optimized for circuits,such as phase shifting,attenuation and amplification to achieve good amplitude and phase characte-ristics.To achieve small size and high performance,a compact and dual-channel symmetrical design was used for the layout.The test results show that under a voltage of+5 V,the gain of the receiving channel is greater than 3 dB,the output power at 1 dB compression point is greater than 8 dBm.The gain of the transceiving channel is greater than 1 dB,the output power at 1 dB compression point is greater than 2 dBm.The root mean square error of the 64 state phase-shifting is less than 2.5°and the root mean square error of the 16 state attenuation is less than 0.3 dB.The chip size is 3.90 mmx2.25 mm.The multi-function chip can achieve high-precision control of the radio frequency signal amplitude and phase,thus can be widely used in microwave transceiver modules.

关 键 词：双通道 多功能芯片 增强/耗尽型赝配高电子迁移率晶体管(E/D PHEMT) 单刀双掷(SPDT)开关 数控移相器 数控衰减器 

分 类 号：TN715[电子电信—电路与系统] TN454