基于LTCC技术的TR组件失效分析  

作　　者：贺彪 高鹏 张辉 

机构地区：[1]华东光电集成器件研究所,江苏苏州215163

出　　处：《科技创新与应用》2024年第16期159-162,共4页Technology Innovation and Application

摘　　要：对某Ku频段4通道TR组件在后续客户使用过程中出现的异常导通现象,进行故障定位。通过机理分析与各种检测手段,认为在电磁场、温度、湿度等综合应力作用下LTCC基板内部存在银离子迁移导致的绝缘电阻下降甚至短路等失效模式是造成该TR组件异常导通的根本原因。根据分析结果,提出改进措施。The fault location is carried out for the abnormal conduction phenomenon of a Ku band 4-channel TR component in the process of subsequent customer use.Through mechanism analysis and various testing methods,it is considered that the failure modes such as the decrease of insulation resistance or even short circuit caused by silver ion migration in the LTCC substrate under the comprehensive stress such as electromagnetic field,temperature and humidity are the root causes of the abnormal conduction of the TR module.According to the analysis results,the improvement measures are put forward.

关 键 词：LTCC TR组件 银离子迁移 异常导通 故障定位 

分 类 号：TN958.92[电子电信—信号与信息处理]