一款18~40GHzMMIC无源双平衡混频器  

18-40 GHz MMIC Passive Double Balanced Mixer

作　　者：陈亮宇 骆紫涵 许丹 蒋乐 豆兴昆 CHEN Liangyu;LUO Zihan;XU Dan;JIANG Le;DOU Xingkun(China Key System&Inte grated Circuit Co.,Ltd.,Wuxi 214072,China)

机构地区：[1]中科芯集成电路有限公司,江苏无锡214072

出　　处：《电子与封装》2024年第5期48-52,共5页Electronics & Packaging

摘　　要：基于0.15μm GaAs赝配高电子迁移率晶体管(p HEMT)工艺,设计了一款18~40 GHz的无源双平衡混频器。该混频器采用肖特基二极管构成的混频环和3耦合线Marchand巴伦的结构,提高工作带宽的同时也减小了芯片尺寸。当本振(LO)功率为14 d Bm、中频(IF)频率为100 MHz时,常温下流片测试的各项参数典型值为上下变频模式下LO/射频(RF)频段覆盖18~40 GHz,带内变频损耗为-7 d B,1 d B压缩点功率值为10 d Bm,LO到RF端口的隔离度为-25 d B,同时其余各端口之间具有优良的隔离度。中频频率覆盖DC~20 GHz,芯片尺寸为1.63 mm×0.97 mm。An 18-40 GHz passive double balanced mixer is designed based on 0.15μm GaAs pseudomorphic high electron mobility transistor(pHEMT)process.The mixer adopts a mixing ring composed of Schottky diodes and a triple-coupled line Marchand Balun to improve the working bandwidth and reduce the chip size.When the power of the local oscillator(LO)is 14 dBm and the intermediate frequency(IF)is 100 MHz,the typical parameter values of the flow test at room temperature are in the LO/RF band of 18-40 GHz in the up-and down-conversion modes,with an in-band conversion loss of-7 dB,the power value of the 1 dB compression point of 10 dBm,and an isolation degree of-25 dB from the LO to RF ports while the rest of ports have excellent isolation.The IF covers the frequency of DC-20 GHz,and the chip size is 1.63 mm×0.97 mm.

关 键 词：无源双平衡混频器 宽带 单片微波集成电路 

分 类 号：TN773.2[电子电信—电路与系统] TN454