N多晶电阻的温度漂移影响因子及工艺研究  

N Polycrystalline Resistor Temperature Drift Influence Factor and Process Research

作　　者：陈培仓 周凌霄 洪成强 王涛 吴建伟 CHEN Peicang;ZHOU Lingxiao;HONG Chengqiang;WANG Tao;WU Jianwei(Wuxi Zhongwei Microchips Co.,Ltd.,Wuxi 214035,China)

机构地区：[1]无锡中微晶园电子有限公司,江苏无锡214035

出　　处：《电子与封装》2024年第5期85-88,共4页Electronics & Packaging

摘　　要：多晶电阻在集成电路中应用广泛,可用作电路负载、阻尼、分压或分流,但是在实际使用过程中,多晶掺杂电阻的阻值由载流子浓度和迁移率决定,而2者都会受到温度的影响,因此多晶电阻的阻值随温度的变化而变化,且存在一定的温度系数。对N多晶电阻的温度漂移影响因子展开研究并进行分组实验验证,制备出了温度系数在±10×10^(-6)/℃以内的低温度漂移、高精度半导体N多晶电阻,保证了不同温度环境下电路的工作稳定性,为高稳定电路设计提供了参考依据。Polycrystalline resistors are widely used in integrated circuits as circuit loads,damping,voltage-sharing or current-sharing.However,the resistance value of polycrystalline doped resistors is determined by the carrier concentration and mobility in practice,and both of them are affected by the temperature,so the resistance value of polycrystalline resistors varies with the change of temperature,and there is a certain temperature coefficient.The temperature drift influence factor of N polycrystalline resistor is investigated and verified by group experiments.Low-temperature-drift and high-precision semiconductor N polycrystalline resistors with a temperature coefficient within±10×10^(-6)/℃ are prepared,which ensure the stability of circuits under different temperature environments,and provide a reference for the design of high-stability circuits.

关 键 词：多晶电阻 掺杂 温度漂移 

分 类 号：TN305.3[电子电信—物理电子学]