深能级瞬态谱技术在Ⅲ-Ⅴ族太阳电池辐照损伤微观分析中的应用  

Deep Level Transient Spectroscopy Technique Applied to Microscopic Analysis of Radiation Damage ofⅢ-ⅤCompound Solar Cells

作　　者：李盟 艾尔肯·阿不都瓦衣提 王忠旭 唐光海 张淑艺 王亭保 杨鑫 庄玉 LI Meng;Aierken ABUDUWAYITI;WANG Zhongxu;TANG Guanghai;ZHANG Shuyi;WANG Tingbao;YANG Xin;ZHUANG Yu(School of Energy and Environmental Sciences,Yunnan Normal University,Kunming 650500,China)

机构地区：[1]云南师范大学能源与环境科学学院,昆明650500

出　　处：《现代应用物理》2024年第2期1-17,共17页Modern Applied Physics

基　　金：国家自然科学基金资助项目(U2330121);云南省科技厅重点基金资助项目(202201AS070019)。

摘　　要：首先介绍了深能级瞬态谱(deep level transient spectroscopy,DLTS)技术在GaAs,GaInP及多结太阳电池辐照损伤微观分析中的应用,然后对DLTS技术在退火对GaAs,GaInP中主要陷阱的影响中如何发挥作用进行了综述,最后梳理了DLTS、时间分辨荧光光谱(time-resolved photoluminescence,TRPL)、光致发光谱(photoluminescence spectroscopy,PL)等测试手段及计算机仿真模拟在后续研究中的应用说明。可为粒子辐照诱发太阳电池缺陷产生及其影响机制的研究提供参考。In this paper,the application of deep level transient spectroscopy(DLTS)technique in microscopic analysis of radiation damage of GaAs,GaInP and multi-junction solar cells is introduced.The role of DLTS technique in the influence of annealing on the main traps in GaAs and GaInP is reviewed.The testing methods such as DLTS,time-resolved photoluminescence(TRPL),photoluminescence spectroscopy(PL),and the application of computer simulation in subsequent research are summarized.This paper can provide reference for the study of particle irradiation-induced defects in solar cells and its impact mechanisms.

关 键 词：深能级瞬态谱 缺陷 辐照损伤 Ⅲ-Ⅴ族太阳电池 损伤机理 

分 类 号：TL81[核科学技术—核技术及应用] TM914[电气工程—电力电子与电力传动]