基于Back-n白光中子实验装置的SRAM翻转截面测量  

Measurement of Single Event Upset Cross Section of Static Random Access Memories at the CSNS Back-n Facility

作　　者：刘毓萱 秋妍妍 谭志新 易晗[1,3] 贺永宁 赵小龙[2] 樊瑞睿[1,3,4] LIU Yuxuan;QIU Yanyan;TAN Zhixin;YI Han;HE Yongning;ZHAO Xiaolong;FAN Ruirui(Spallation Neutron Source Science Center,Dongguan,Guangdong Province 523803,China;School of Microelectronics,Xi’an Jiaotong University,Xi’an 710049,China;Institute of High Energy Physics,Chinese Academy of Sciences,Beijing 100049,China;State Key Laboratory of Particle Detection and Electronics,Beijing 100049,China)

机构地区：[1]散裂中子源科学中心,广东东莞523803 [2]西安交通大学微电子学院,西安710049 [3]中国科学院高能物理研究所,北京100049 [4]粒子探测与电子学国家重点实验室,北京100049

出　　处：《现代应用物理》2024年第2期103-107,共5页Modern Applied Physics

基　　金：广东省基础与应用基础研究基金资助项目(2021B1515120027);粒子探测与电子学国家重点实验室资助项目(SKLPDE-ZZ-202008)。

摘　　要：本文主要研究静态随机存取存储器(static random-access memory,SRAM)的单粒子效应翻转截面的测量方法。基于宽能谱白光中子束流,采用了一种操作更方便的SRAM翻转截面测量方法。在SRAM前面放置聚乙烯中子慢化材料改变入射到SRAM表面上的中子能谱,利用模拟计算得到改变后的中子能谱。利用奇异值分解法求解翻转率的矩阵方程得到SRAM的翻转截面。结果表明在4~15 MeV的能量范围内,使用反角白光中子源测试的SRAM翻转截面信息和参考文献中使用单能中子源测试拟合的SRAM翻转截面信息基本吻合。In this paper,a more convenient method for measuring the single event upset(SEU)cross section of SRAM at the CSNS Back-n facility is proposed.According to the placement of polyethylene neutron moderating material in front of the SRAM,the energy spectrum of neutron incident on the surface of the SRAM is changed,and the changed neutron energy spectrum is obtained by simulation.The SEU cross section of SRAM is obtained by solving the matrix equation of the upset rate by singular value decomposition method.The results show that in the energy range of 4 MeV to 15 MeV,the SEU cross section information of SRAM measured at the CSNS Back-n facility and fitted with monoenergic neutron source in the references is basically consistent.

关 键 词：中子能谱 准单能中子源 单粒子效应 SRAM翻转截面 奇异值分解 

分 类 号：O571[理学—粒子物理与原子核物理] TL99[理学—物理]