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作 者:史言回 崔首龙 韩锋 李峰 王艳飞[2] SHI Yanhui;CUI Shoulong;HAN Feng;LI Feng;WANG Yanfei
机构地区:[1]江苏鑫华半导体科技股份有限公司,江苏徐州221008 [2]中国矿业大学化工学院,江苏徐州221116
出 处:《化工设计通讯》2024年第5期4-6,共3页Chemical Engineering Design Communications
摘 要:电子级多晶硅生产设备有超洁净要求,使得超声冲击处理(Ultrasonic impact treatment,UIT)方法不适应于该类设备的消应力,因为处理导致的表面深坑、毛刺等缺陷可能挂污、藏水,降低产品纯度。鉴于此,研究UIT后打磨去除表面缺陷对引入的残余压应力的影响。结果表明,UIT能够有效将焊缝残余拉应力转变为压应力,高强度UIT和高覆盖率UIT在引入压应力上可达相近效果,打磨去除表面缺陷对残余压应力的影响不大。The ultra-clean requirement for electronic-grade polycrystalline silicon production make certain methods,such as ultrasonic impact treatment(UIT),which reduces surface residual stress,unsuitable because the treatment may result in surface pits,burrs,and other defects that could accumulate dirt and retain water.This study investigates the influence of post-UIT polishing to remove surface defects on the introduced residual compressive stress.The results indicate that UIT can effectively transform residual tensile stress in the weld seam into compressive stress,and high-intensity UIT and high coverage UIT achieve similar effects in introducing stress.The removal of surface defects through polishing has little impact on residual stress.For the reduction furnace of polycrystalline silicon,post-UIT polishing can be applied to improve the resistance to stress corrosion cracking.
分 类 号:TG174.3[金属学及工艺—金属表面处理]
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