双光束超分辨光刻技术的发展和未来  

Development and future of dual-beamn super-resolution lithographic technology

作　　者：谢大乐 艾星星 甘棕松 XIE Dale;AI Xingxing;GAN Zongsong(Wuhan National Laboratory for Optoelectronics,Huazhong University of Science and Technology,Wuhan 430074,China;Key Laboratory of Education Ministry for Information Storage Systems,Huazhong University of Science and Technology,Wuhan 430074,China;College of Chemisty and Chemical Hrgineering,Huanggang Namal University,Huanggang 438000,China)

机构地区：[1]华中科技大学武汉光电国家研究中心,武汉430074 [2]华中科技大学信息存储系统教育部重点实验室,武汉430074 [3]黄冈师范学院化学化工学院,黄冈438000

出　　处：《科技导报》2024年第8期21-28,共8页Science & Technology Review

基　　金：国家重点研发计划专项(2021YFB2802000)。

摘　　要：近年来,随着芯片制造工艺的不断提高,光刻技术发展面临着一些难题,这些难题也影响着芯片行业发展及摩尔定律的持续性。然而,当前主流的极紫外光刻技术已经接近制造极限,需要更先进的技术来突破技术瓶颈。综述了基于双光束超分辨技术的光刻技术概念,并分析了其优势和潜力,同时提出了该技术面临的挑战和可能的解决方案,指出这种新型光刻技术有望在微纳制造领域扮演重要的角色。In recent years,with continuous improvement of chip manufacturing technology,the development of lithography technology is facing some difficulties,which also affect the development of chip industry and the sustainability of Moore's Law.However,current mainstream extreme ultraviolet lithography technology is close to the manufacturing limit,and more advanced technology is needed to break through the technical bottleneck.In this paper,the concept of lithography based on dual-beam super-resolution technology is reviewed,and its advantages and potential are analyzed.At the same time,the challenges and possible solutions of this technology are proposed.This new lithography technology is expected to play an important role in the field of micro-nano manufacturing.

关 键 词：芯片制造 光刻技术 双光束 超分辨 

分 类 号：TN405[电子电信—微电子学与固体电子学]