感光层厚度对a-GaO_(x)基日盲紫外光电探测器的性能影响研究  

Study on Impact of Photoreceptive Layer Thickness on Performance of A-Gao_(x)-Based Solar-Blind Ultraviolet Photodetectors

作　　者：常鼎钧 李赜明 张赫之[2] CHANG Dingjun;LI Zeming;ZHANG Hezhi(School of Geophysics and Information Technology,China University of Geosciences,Beijing 100028,China;School of Integrated Circuits,Dalian University of Technology,Dalian 116024,China)

机构地区：[1]中国地质大学(北京)地球物理与信息技术学院,北京100028 [2]大连理工大学集成电路学院,辽宁大连116024

出　　处：《吉林大学学报（信息科学版）》2024年第3期567-572,共6页Journal of Jilin University（Information Science Edition）

基　　金：国家自然科学基金资助项目(62104024)。

摘　　要：为制备高性能日盲紫外光电探测器,采用低温金属有机物化学气相沉积方法制备了非晶氧化镓薄膜。通过对薄膜结构特性测试证明了薄膜的非晶特性,并且薄膜表面较为平坦,光学吸收边位于深紫外波段范围内。在此基础上,研制了日盲紫外光电探测器。随非晶氧化镓感光层厚度由33.2 nm增至133.6 nm,探测器的光电流和暗电流均提升了2个数量级,并且响应度和外量子效率均随感光层厚度提升而增大,探测器的响应度和外量子效率的最大值分别达到2.91 A/W和1419.12%。探测器的厚度依赖特性可归因于界面高缺陷层、光吸收强度以及探测器的几何参数。此外,探测器展现出良好的波长选择性以及时间分辨响应稳定性。Due to its low background noise,solar-blind ultraviolet photodetection technology is widely used in fields such as fire monitoring,missile detection,and military communication.Compared to other solar-blind ultraviolet sensitive materials,amorphous gallium oxide offers several advantages,including a bandgap that matches the solar-blind ultraviolet region,structural stability,and good mechanical strength.The horizontal metal-semiconductor-metal structured photodetectors are known for their simple production processes,ease of integration,and suitability for industrialization.Given the non-uniform distribution of the internal electric field and the photo-generated carriers along the thickness direction in horizontal devices,the thickness of the photoreceptive layer plays a crucial role in the performance of the photodetectors.In order to fabricate high-performance solar-blind ultraviolet photodetectors,amorphous gallium oxide thin films were prepared using low-temperature metal organic chemical vapor deposition method.Structural characterization of the films confirmed their amorphous nature,and the film surfaces were found to be relatively flat,with the optical absorption edge located within the deep ultraviolet spectral range.Solar-blind ultraviolet photodetectors were subsequently developed.As the thickness of the photoreceptive layer increased from 33.2 nm to 133.6 nm,the dark-current of the photodetector rose from 2.33×10^(-10)A to 2.12×10^(-8)A,and the photo-current under 254 nm illumination increased from 1.66×10^(-7)A to 3.2×10^(-5)A.Additionally,both the responsivity and the external quantum efficiency of the photodetectors increased by orders of magnitude with the increase in the photoreceptive layer thickness,reaching maximum values of 2.91 A/W and 1419.12%,respectively.The thickness-dependent characteristics of the photodetectors can be attributed to the interfacial high-defect layers,light absorption intensity,and the geometric parameters of the photodetectors.The photodetectors exhibited excellent wa

关 键 词：非晶氧化镓 日盲紫外探测 厚度依赖特性 金属有机物化学气相沉积 

分 类 号：TN303[电子电信—物理电子学]