基于GaSe/Ga_(2)O_(3)异质结的自供电日盲紫外光电探测器  

GaSe/β-Ga2O3 heterojunction based self-powered solar-blind ultraviolet photoelectric detector

作　　者：宿冉 奚昭颖 李山 张嘉汉 姜明明 刘增 唐为华 Su Ran;Xi Zhao-Ying;Li Shan;Zhang Jia-Han;Jiang Ming-Ming;Liu Zeng;Tang Wei-Hua(Innovation Center of Gallium Oxide Semiconductor(IC-GAO),College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China;School of Electronic Information Engineering,Inner Mongolia University,Hohhot 010021,China;School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China;MIIT Key Laboratory of Aerospace Information Materials and Physics,College of Physics,Nanjing University of Aeronautics and Astronautics,Nanjing 211106,China)

机构地区：[1]南京邮电大学集成电路科学与工程学院(产教融合学院),氧化镓半导体创新中心(IC-GAO),南京210023 [2]内蒙古大学电子信息工程学院,呼和浩特010021 [3]南京大学电子科学与工程学院,南京210093 [4]南京航空航天大学物理学院,空天信息材料与物理工信部重点实验室,南京211106

出　　处：《物理学报》2024年第11期360-367,共8页Acta Physica Sinica

基　　金：国家自然科学基金青年科学基金(批准号:62204125,62305171)、国家自然科学基金联合基金(批准号:U23A20349)资助的课题;国家重点研发计划(批准号:2022YFB3605404)。

摘　　要：氧化镓(Ga_(2)O_(3))作为超宽禁带半导体在深紫外探测领域有极其重要的应用价值.它能与GaSe形成典型的Ⅱ型异质结构,促进载流子分离与传输,进而实现高性能的自供电探测.本文利用等离子体增强化学气相沉积(PECVD)技术在蓝宝石衬底上生长了Ga_(2)O_(3)薄膜,并采用布里奇曼技术在氧化镓薄膜上生长了GaSe薄膜,构建了GaSe/β-Ga_(2)O_(3)异质结光电探测器,分析其中涉及的光物理与界面物理问题.该探测器对深紫外光有很好的响应性能,在8 V的电压下器件的暗电流仅为1.83 pA,254 nm光照下的光电流达到了6.5 nA,且UV-C/可见光(254 nm/600 nm)的抑制比约为354,即使在很小的光照强度下,响应度和探测度也达到了1.49 mA/W和6.65×10^(11)Jones.同时,由于结界面上的空间电荷区形成的光伏效应,该探测器在零偏压下表现出自供电性能,开路电压为0.2 V.此外,探测器有很好的灵敏度,无论是在电压恒定的条件下用不同光强的光照射探测器,还是在光强恒定条件下改变电压,器件都能快速响应.UV photodetectors have the advantages of high sensitivity and fast response speed.As an ultra-wide bandgap semiconductor,gallium oxide(Ga2O3)plays an extremely important role in detecting deep ultraviolet.It can form a typical type-II heterostructure with GaSe,promoting carrier separation and transport.In this work,Ga2O3 epitaxial films are grown on sapphire substrates by plasma-assisted chemical vapor deposition(PECVD).The GaSe films and GaSe/β-Ga2O3 heterojunction photodetectors are grown on gallium oxide films by Bridgeman technology.The detector has a good response to deep ultraviolet light,the dark current of the device is only 1.83 pA at 8 V,and the photocurrent reaches 6.5 nA at 254 nm.The UVC/Visible(254 nm/600 nm)has a high rejection ratio of about 354.At very small light intensities,the responsivity and detection can reach 1.49 mA/W and 6.65×1011 Jones,respectively.At the same time,due to the photovoltaic effect formed by the space charge region at the junction interface,the detector exhibits self-powered supply performance at zero bias voltage,and the open-circuit voltage is 0.2 V.In addition,the detector has a very good sensitivity.The device can respond quickly,whether it is irradiated with different light intensities under constant voltage,or with different voltages under constant light intensity.It can respond within milliseconds under a bias voltage of 10 V.This work demonstrates the enormous potential of heterojunctions in photoelectric detection by analyzing the photophysical and interface physical issues involved in heterojunction photodetectors,and provides a possibility for detecting the deep ultraviolet of gallium oxide.

关 键 词：光电探测器 氧化镓 硒化镓 自供电 

分 类 号：TN2[电子电信—物理电子学]