p型InGaAs薄层半导体欧姆接触特性分析  

Analysis for Ohmic Contact Characteristics of p-Type InGaAs Thin-Layer Semiconductor

作　　者：宋红伟 宋洁晶[1] 秦龙 Song Hongwei;Song Jiejing;Qin Long(The 13th Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2024年第6期62-67,共6页Micronanoelectronic Technology

摘　　要：从电流在金属和半导体界面的拥堵效应出发,依据圆形传输线模型(CTLM)推导出适用于金属和薄层半导体间欧姆接触电阻率的表达式。利用四探针电阻测量法、高导电性下小电流密度测试法以及对薄膜电阻和传输线长度采用非线性拟合的方法获得薄层半导体与金属之间高精度的欧姆接触电阻和电阻率测试结果。研究了Zn掺杂浓度和合金温度对p型InGaAs薄层半导体欧姆接触特性的影响。研究发现:在相同合金温度下,掺杂浓度为1.94×10^(19)cm^(-3)时,样品的欧姆接触电阻率小于掺杂浓度为1.52×10^(19)cm^(-3)的样品,即提高p型InGaAs薄层半导体Zn掺杂浓度有利于半导体和金属Ti/Pt/Au形成良好的欧姆接触;相同Zn掺杂浓度的p型InGaAs薄层半导体,在经过光刻、等离子体去胶、湿法腐蚀等前道工艺后,合金温度为410℃的样品欧姆接触电阻率小于合金温度为380℃的样品,即可通过提高合金温度改善半导体与金属之间的欧姆接触特性。Based on the congestion effect of current at the interface between metal and semiconductor,an expression of ohmic contact resistivity for metal and thin-layer semiconductor was derived by circular transmission line model(CTLM).Highly accurate measurement results of ohmic contact resistance and resistivity between thin-layer semiconductor and metal were obtained by four probe resistance measurement,small current density test method under high conductivity,and nonlinear fitting method for film resistance and transmission line length.The effects of Zn doping concentration and alloy temperature on the ohmic contact characteristics of ptype InGaAs thin-layer semiconductor were studied.It is found that the ohmic contact resistivity of p-type InGaAs thin-layer semiconductor with a doping concentration of 1.94×10^(19)cm^(-3) is smaller than that of 1.52×10^(19)cm^(-3).The increasing Zn doping concentration of p-type InGaAs thin-layer semiconductor is conducive to forming good ohmic contact characteristics between semiconductor and metal Ti/Pt/Au.For p-type InGaAs thin-layer semiconductors with same Zn doping concentration,after photolithography,photoresist removing by plasma,wet corrosion,and other pre-processes,the ohmic contact resistivity of the sample with an alloy temperature of 410℃is smaller than that of the sample with an alloy temperature of 380℃,so that the ohmic contact characteristics between semiconductor and metal can be improved by increasing the alloy temperature.

关 键 词：欧姆接触特性 薄层半导体 掺杂浓度 合金温度 

分 类 号：TN305[电子电信—物理电子学]