L波段硅基多层堆叠MEMS耦合器  

L-Band Silicon-Based Multilayer Stacked MEMS Coupler

作　　者：汪蔚[1] 李志东 王伟强 周嘉 武亚宵 Wang Wei;Li Zhidong;Wang Weiqiang;Zhou Jia;Wu Yaxiao(The 13th Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2024年第6期125-130,共6页Micronanoelectronic Technology

摘　　要：基于射频传输理论设计并制备了一款Si基多层堆叠微电子机械系统(MEMS)耦合器。该耦合器以高阻硅作为衬底材料,采用高精度三维MEMS加工工艺制备而成。利用电磁仿真软件进行了建模仿真,并经过金属图形化、硅基通孔(TSV)、晶圆减薄、晶圆键合等MEMS工艺完成器件制备。采用三层硅片进行堆叠,信号传输时,通过上下两层金属的层间距离对耦合度进行调整,相比常规的平面耦合具有更小的横向尺寸。同时,为了减小信号传输过程中的辐射效应,在信号线周围设计了接地通孔,实现对耦合器的全屏蔽,使其免受外部电磁场的影响。所制备的硅基多层堆叠MEMS耦合器的频带范围为0.75~1.25 GHz,性能指标良好,尺寸仅为5.5 mm×6.0 mm×1 mm,相比常规的平面耦合结构缩小了50%,相比多层印制电路板(PCB)结构缩小了20%。Based on radio frequency transmission theory,a silicon-based multilayer stacked microelectromechanical system(MEMS)coupler was designed and fabricated.With high resistance silicon as substrate material,the coupler was fabricated by high-precision 3D MEMS processing technology.Modeling and simulation were conducted using electromagnetic simulation software,and the device was fabricated by MEMS processes such as metal graphics,through silicon via(TSV),wafer thinning and wafer bonding.Three-layer silicon wafers were used for stacking.When the signal is transmitted,the coupling degree is adjusted by the interlayer distance between the upper and lower metal layers,which has a smaller lateral size than the conventional planar coupling.Meanwhile,to reduce the signal radiation effect in the process of signal transmission,a grounding through-hole was designed around the signal line to achieve full shielding of the coupler,thus the couple was protected from the influence of external electromagnetic fields.The prepared silicon-based multilayer stacked MEMS coupler has a frequency band range of 0.75-1.25 GHz,good performance indicators,and a size of only 5.5 mm×6.0 mm×1 mm,which is reduced by 50%compared with conventional planar coupling structures,and is reduced by 20%compared with multilayer printed circuit plate(PCB)structures.

关 键 词：微电子机械系统(MEMS) 耦合器 全屏蔽 高阻硅 多层 

分 类 号：TN622[电子电信—电路与系统] TH703[机械工程—仪器科学与技术]