采用基片集成波导技术的毫米波MEMS环行器  

Millimeter-Wave MEMS Circulator Based on Substrate Integrated Waveguide Technology

作　　者：董建利 李志东 翟晓飞 周嘉 Dong Jianli;Li Zhidong;Zhai Xiaofei;Zhou Jia(MT Microsystems Co.,Ltd.,Shijiazhuang 050299,China;The 13th Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]河北美泰电子科技有限公司,石家庄050299 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2024年第6期131-137,共7页Micronanoelectronic Technology

摘　　要：设计并制备了一款毫米波的微机电系统(MEMS)环行器。该毫米波MEMS环行器芯片采用高阻硅作为衬底,利用基片集成波导(SIW)技术,基于硅基MEMS工艺,采用低损耗金属化技术,实现了硅通孔金属化的制备。采用三维电磁仿真软件进行模拟,设计了该毫米波MEMS环行器的结构以及SIW与微带线的过渡匹配,并在此基础上优化设计了一套通用的制备毫米波MEMS环行器的工艺流程。并对制备的毫米波MEMS环行器进行了性能测试。结果表明,该环行器的频率范围为24~28 GHz,频带内插入损耗≤0.5 dB,隔离度≥17 dB,尺寸仅为5 mm×5 mm×2.5 mm,能够满足大部分应用需求。A millimeter-wave micro-electromechanical system(MEMS)circulator was designed and fabricated.The high resistance silicon as substrate and substrate integrated waveguide(SIW)technology was used in the millimeter-wave MEMS circulator chip,and low loss metallization technology based on silicon-based MEMS process was adopted to realize the preparation of through silicon via metallization.Three-dimensional electromagnetic simulation software was used to simulate the structure of the millimeter-wave MEMS circulator and the transition matching between SIW and microstrip line.On this basis,a general process of preparing the MEMS circulator in millimeter-wave band was optimized.The performance of the millimeterwave MEMS circulator was tested.The results show that the frequency range of the circulator is 24-28 GHz,the insertion loss in the frequency band is≤0.5 dB,the isolation is≥17 dB,and the size is only 5 mm×5 mm×2.5 mm,which can meet most application requirements.

关 键 词：微机电系统(MEMS) 环行器 毫米波 基片集成波导(SIW) 高阻硅 

分 类 号：TN621[电子电信—电路与系统] TH703[机械工程—仪器科学与技术]