增强型GaN功率管的可靠性分析  

Analysis of Reliability of Enhanced GaN Power Transistors

作　　者：赵媛 王立新[1] 赵高峰[2] 郭敏 ZHAO Yuan;WANG Lixin;ZHAO Gaofeng;GUO Min(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Henan University,Henan 475001,China)

机构地区：[1]中国科学院微电子研究所,北京100029 [2]河南大学,河南475001

出　　处：《集成电路应用》2024年第4期22-25,共4页Application of IC

摘　　要：阐述氮化镓器件的结构和特性,描述其开关导通过程并搭建等效模型,从内部驱动电路和外界共模瞬态(CMT)事件的影响两方面进行分析,得出影响氮化镓功率器件可靠性的因素,基于此可靠性分析提出对于不同功率管误开启事件采用的不同解决方案,并通过Cadence仿真软件进行ADE仿真,印证其可靠性结果。This paper expounds the switch conduction process and build the equivalent modelthrough the elaboration of Gallium Nitride device structure and characteristics,and carries on the analysisfrom two parts,drive circuit and the outsideenvironmentfrom within the influence of common mode transient events(CMTI),concluded that the different factors effecting the reliability of gallium nitride power device,based on the reliability analysis is put forward for different power tube opening event with different solutions,and ADE by Cadence simulation software simulation verify the reliability of the results.

关 键 词：增强型氮化镓器件 半桥驱动电路 欠阻尼关断 共模瞬态抗扰度 

分 类 号：TN402[电子电信—微电子学与固体电子学] TN432