浅沟槽隔离填充的工艺优化分析  

Study and Improvement of STI Gap Fill Process

作　　者：郭国超 田守卫 GUO Guochao;TIAN Shouwei(Shanghai Huahong Grace Semiconductor Manufacturing Corporation,Shanghai 201203,China)

机构地区：[1]中国上海华虹宏力半导体制造有限公司,上海201203

出　　处：《集成电路应用》2024年第4期50-51,共2页Application of IC

摘　　要：阐述浅沟槽结构中SiN厚度对填充效果的影响,发现SiN厚度对浅沟槽填充效果存在拐点,并从机理上解释出现拐点的原因,提出有效深宽比的概念,为优化HDP CVD的沉积工艺提供理论依据。This paper describes the influence of SiN thickness on the gap fill.It was discovered that SiN thickness had a turning point on the STI gap fill.The mechanism behind the turning point was explained,and the concept of effective aspect ratio was proposed,which provides theory instruction for HDP CVD process optimization of STI gap fill.

关 键 词：集成电路应用 浅沟槽隔离 填充 HDP CVD 深宽比 

分 类 号：TN405[电子电信—微电子学与固体电子学]