基于3D封装的低感双向开关SiC功率模块研究  

3D Packaging for Low-inductance Bidirectional Switch of SiC Power Module

作　　者：王思媛 梁钰茜 孙鹏 邹铭锐 龚佳坤 曾正[2,3] WANG Siyuan;LIANG Yuxi;SUN Peng;ZOU Mingrui;GONG Jiakun;ZENG Zheng(CQU-UC Joint Co-Op Institute,Chongqing University,Chongqing 400044,China;School of Electrical Engineering,Chongqing University,Chongqing 400044,China;CPSS)

机构地区：[1]重庆大学辛辛那提大学联合学院,重庆400044 [2]重庆大学电气工程学院,重庆400044 [3]中国电源学会

出　　处：《电源学报》2024年第3期87-92,共6页Journal of Power Supply

基　　金：国家自然科学基金资助项目(52177169)。

摘　　要：双向开关在固态断路器、光伏逆变器等领域具有不可替代的作用,而低损耗、高开关频率的双向开关SiC功率模块得到了越来越多的关注。然而,现有双向开关SiC功率模块仍然沿用传统Si功率模块的封装方法,难以适应SiC器件的高速开关优势。针对双向开关SiC功率模块的低感封装需求,提出一种芯片堆叠的3D封装集成方法。给出了3D封装的电路拓扑和几何结构,分析3D封装的换流回路和寄生电感规律,设计3D封装的技术工艺,并研制了双向开关SiC功率模块样机。采用双脉冲测试的实验结果验证了所提3D封装双向开关SiC功率模块的可行性和有效性。The bidirectional switch is extensively applied in the fields such as state-solid breakers and photovoltaic inverters,and increasing attention is paid to the bidirectional switch of SiC power modules owing to its low power loss and high switching frequency.However,due to the traditional packaging methods for Si power modules,the bidirectional switch of the SiC power module is challenged by the issue of high switching speed.Aimed at the low-inductance packaging requirement,a chip-on-chip 3D packaging method is proposed for the bidirectional switch of the SiC power module.The circuit topology and geometric structure of the 3D packaging are given,and the communication loop and parasitic inductance of the 3D packaging are analyzed.In addition,the process was designed for the 3D packaging,and a prototype of the bidirectional switch of the SiC power module was fabricated.Experimental results of a double-pulse test verified the feasibility and effectiveness of the proposed 3D packaging for the bidirectional switch of the SiC power module.

关 键 词：双向开关 SiC功率模块 低寄生电感 3D封装 

分 类 号：TM46[电气工程—电器]