雪崩晶体管电压斜坡触发模式下终端失效机理研究  

Investigation on Terminal Failure Mechanism of Avalanche Bipolar Junction Transistor in Voltage Ramp Triggering Mode

作　　者：温凯俊 梁琳[1] 陈晗 WEN Kaijun;LIANG Lin;CHEN Han(State Key Laboratory of Advanced Electromagnetic Technology(Huazhong University of Science and Technology),Wuhan 430070,China;CPSS)

机构地区：[1]强电磁技术全国重点实验室(华中科技大学电气与电子工程学院),武汉430070 [2]中国电源学会

出　　处：《电源学报》2024年第3期220-226,共7页Journal of Power Supply

基　　金：台达电力电子科教发展计划重点资助项目(DREK2022003)。

摘　　要：随着超宽带脉冲信号系统在新能源汽车智能化感知技术等许多重要领域的应用,高幅值、快前沿脉冲源的研发得到了广泛研究。针对纳秒级前沿脉冲对超快功率半导体开关的需求,进行了雪崩晶体管在电压斜坡触发模式下终端失效机理的研究。利用仿真模型的静态特性与器件样品进行对比分析,测试了器件样品的动态开通特性。在成功得到纳秒级开通速度器件的基础上,对器件在电压斜坡触发模式下出现的失效现象进行了分析。With the applications of an ultra-wideband pulse signal system in many important fields such as the intelligent sensing technology for new energy automobile,the research and development of high-amplitude and fast-front pulse sources has been widely studied.To meet the demand of an ultrafast power semiconductor switch in nanosecond front pulses,the terminal failure mechanism of avalanche bipolar junction transistor in voltage ramp triggering mode is studied in this paper.The static characteristics of a simulation model are compared with those of a sample device,and the dynamic switching characteristics of the sample device were tested.On the basis of a successful device with a nanosecond switching speed,its failure phenomenon in voltage ramp triggering mode was analyzed.

关 键 词：雪崩晶体管 二次击穿 半导体器件建模 MARX电路 失效分析 

分 类 号：TN323[电子电信—物理电子学]