基于PECVD技术的石墨烯可控制备与应用:现状与展望  

PECVD synthesis of graphene toward wide applications:Progress and prospects

作　　者：郝朝旭 王雪东 何燕[1] 慈海娜 Chaoxu Hao;Xuedong Wang;Yan He;Haina Ci(College of Electromechanical Engineering,Qingdao University of Science and Technology,Qingdao 266061,China)

机构地区：[1]青岛科技大学机电工程学院,青岛266061

出　　处：《科学通报》2024年第14期1893-1905,共13页Chinese Science Bulletin

基　　金：国家自然科学基金(52202038);山东省自然科学基金(ZR2022QE081);山东省泰山学者项目(ts20190937)资助。

摘　　要：石墨烯因其优异的物理/化学特性,在众多领域有着广泛的应用前景.为了推动石墨烯材料的实际应用,需要寻找稳定可靠、可扩展和低成本的石墨烯材料制备方法.等离子体增强化学气相沉积(plasma-enhanced chemical vapor deposition, PECVD)技术是一种借助外加能量辅助反应前驱体裂解产生等离子体,进而实现石墨烯制备的方法. PECVD技术在沿袭了传统化学气相沉积法工艺产物设计性强、反应途径灵活、可批量化、高品质制备石墨烯等优点的基础上,可以实现石墨烯在更低的生长温度、更多样化的生长衬底上以更快的生长速度制备合成,从而能够有效降低能耗,提高制备效率,拓展石墨烯的应用场景.本文综述了近年来利用不同等离子体源(射频、直流和微波)PECVD技术制备石墨烯的研究进展,讨论了其生长机理,以及PECVD制备石墨烯在储能、器件散热和光热转化等相关领域的应用,进一步对PECVD技术在石墨烯制备和应用中面临的挑战和未来的发展前景进行了总结.Graphene, as a two-dimensional crystalline nanomaterial formed by sp²-hybridized carbon atoms, has hold tremendouspotential for various applications owing to its excellent electrical/thermal conductivity, large specific surface area, and hightransparency. To promote the practical applications of graphene, numerous synthetic methods for graphene have beenexplored, e.g., liquid-phase exfoliation, SiC thermal decomposition, chemical vapor deposition (CVD) and so on.Specifically, the CVD approach has received extensive attention for the preparation of high-quality graphene with highcontrollability and compatibility. However, the high growth temperature and tedious transfer process from growthsubstrates onto target substrates severely hinder the development of graphene. To address these challenges and promote thewidespread utilization of graphene, it is imperative to seek effective synthetic methods for the achievement of high-qualitygraphene growth on arbitrary surfaces and at low temperatures.Plasma-enhanced chemical vapor deposition (PECVD) technique offers a promising approach for graphene synthesis byintroducing external energy to facilitate the decomposition of precursor molecules. With the assistance of plasma, a richchemical environment comprising a mixture of radicals, molecules, and ions derived from reaction precursors are formed.This enables the preparation of graphene at lower growth temperatures on more diverse substrates, thereby reducing energyconsumption, improving production efficiency, further expanding the application scenarios of graphene. In this review, wesummarize the recent progress of PECVD synthesis of graphene toward wide applications. Initially, three different plasmasystems consisting of radio-frequency PECVD (RF-PECVD), direct-current PECVD (DC-PECVD), and microwavePECVD (MW-PECVD) are categorized in terms of the plasma generation sources. Through regulating the equilibriumstates between etching and deposition during PECVD growth process, the graphene morphology can be affected. The rol

关 键 词：等离子体增强化学气相沉积 二维石墨烯薄膜 三维石墨烯纳米片 储能 散热 光热转化 

分 类 号：TQ127.11[化学工程—无机化工]