Performance improvement of β-Ga_(2)O_(3)SBD-based rectifier with embedded microchannels in ceramic substrate  

作　　者：Wen HONG Chao ZHANG Fang ZHANG Xuefeng ZHENG Xiaohua MA Yue HAO 

机构地区：[1]State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology,School of Microelectronics,Xidian University,Xi’an 710126,China

出　　处：《Science China(Information Sciences)》2024年第5期337-338,共2页中国科学（信息科学）（英文版）

基　　金：supported in part by National Natural Science Foundation of China(Grant Nos.61974115,U2241220);National Key Research and Development Program of China(Grant No.2021YFB3602404);Fund of National Innovation Center of Radiation Application(Grant No.KFZC2022020401);Natural Science Basic Research Plan in Shaanxi Province of China(Grant No.2023-JC-QN-0669).

摘　　要：With the development of integrated circuits,there is a growing demand for higher power devices[1].Gallium oxide(Ga_(2)O_(3))holds promise for high power devices due to its wide bandgap and high breakdown electric field strength[2].However,its low thermal conductivity induces severe selfheating effects,limiting its performance and reliability.Therefore,effective thermal management techniques are urgently needed for Ga_(2)O_(3) devices.

关 键 词：BREAKDOWN SBD CERAMIC 

分 类 号：TN40[电子电信—微电子学与固体电子学]