近空间升华工艺制备高晶化硒化亚锗光电薄膜及其在太阳能电池中的应用  

Preparation of highly crystalline germanous selenide photoelectronic thin films by close-space sublimation process and its application in solar cells

作　　者：周静[1] 贺伟兰 杨盛文 高莉 曲鹏 蔡永茂 曹宇[4] ZHOU Jing;HE Weilan;YANG Shengwen;GAO Li;QU Peng;CAI Yongmao;CAO Yu(School of Chemical Engineering,Northeast Electric Power University,Jilin 132012,China;Chengde Power Supply Company,State Grid Jibei Electric Power CO.,LTD.,Chengde 067000,China;School of Science,Northeast Electric Power University,Jilin 132012,China;School of Electrical Engineering,Northeast Electric Power University,Jilin 132012,China)

机构地区：[1]东北电力大学化学工程学院,吉林132012 [2]国网冀北电力有限公司承德供电公司,承德067000 [3]东北电力大学理学院,吉林132012 [4]东北电力大学电气工程学院,吉林132012

出　　处：《复合材料学报》2024年第5期2575-2584,共10页Acta Materiae Compositae Sinica

基　　金：国家自然科学基金(52172185);吉林省教育厅科学技术研究项目(JJKH20210084KJ);吉林市科技创新发展计划(20230103006);吉林省创新创业人才资助项目(2022QN15)。

摘　　要：硒化亚锗(GeSe)由于具有原材料储量丰富、绿色无毒、制备工艺简单和性质稳定等优势,近几年得到了广泛关注。采用近空间升华法制备了GeSe薄膜,对GeSe薄膜的结晶行为进行分析,并将其应用到器件结构为FTO/CdS/GeSe/聚(3-己基噻吩)(P3 HT)/C的太阳能电池中进行优化。首先,在蒸发步骤完成后引入退火工艺,能够有效促进GeSe薄膜晶化,使GeSe太阳能电池的光电转换效率(PCE)提高至0.743%。随后,通过衬底温度调节GeSe薄膜的晶化特性,发现衬底温度的提高有利于GeSe薄膜的晶化,但当衬底温度在300℃以上时,过高的温度会使GeSe从衬底上脱附,导致晶化程度下降,器件性能快速退化。在最佳的280℃衬底温度下,GeSe薄膜具有最大的晶粒尺寸和最强的光吸收、最高的电子寿命(τ)和电导率(σ),获得了2.130%的PCE,其中开路电压(V_(OC))为0.299 V,短路电流密度(J_(SC))为16.815 mA·cm^(-2),填充因子(FF)为42.137%。以上研究为高晶化GeSe太阳能电池的制备和优化提供了可行的技术路线。Germanous selenide(GeSe)has attracted extensive attention in recent years because of its abundant raw material reserves,green,non-toxic,simple preparation process and stable properties.GeSe thin films were prepared by close-space sublimation method.The crystallization behavior of GeSe thin films was analyzed and optimized for solar cells with FTO/CdS/GeSe/poly(3-hexylthiophene)(P3 HT)/C device structure.Firstly,the annealing process is introduced after the evaporation step,which can effectively promote the crystallization of GeSe thin film,so that the photoelectric conversion efficiency(PCE)of GeSe solar cells can be increased to 0.743%.Subsequently,by adjusting the crystallization characteristics of the GeSe film by the substrate temperature,it is found that the increase of the substrate temperature is conducive to the crystallization of the GeSe film,but when the substrate temperature is more than 30o'C,the excessive temperature will make the GeSe desurbed from the substrate,resulting in a decrease in the degree of crystallization and rapid degradation of the device performance.At the optimum substrate temperature of 28oC,GeSe films have the largest grain size and the strongest light absorption,the highest electron lifetime(τ)and the highest electrical conductivity(σ),and the PCE of 2.130%,where the open circuit voltage(V_(oc))is 0.299V,and the short circuit current density(J_(sc))is 16.815 mA·cm^(-2).The filling factor(FF)is 42.137%.The above research provides a feasible technical route for the preparation and optimization of high crystalline GeSe solar cells.

关 键 词：硒化亚锗 太阳能电池 晶化 衬底温度 退火 

分 类 号：TB332[一般工业技术—材料科学与工程]