金锡键合在薄膜体声波滤波器晶圆级封装中的研究  

Research on Au-Sn Bonding for Wafer-Level Packaging of FBAR Filters

作　　者：金中 张基钦 吕峻豪 阮文彪 刘娅 甑静怡 孙明宝 孙彦红 JIN Zhong;ZHANG Jiqin;LYU Junhao;RUAN Wenbiao;LIU Ya;ZENG Jingyi;SUN Mingbao;SUN Yanhong(CETC Chips Technology Inc,Chongqing 400060,China;Xiamen Sky Semiconductor Technology Co.Ltd.,Xiamen 361026,China)

机构地区：[1]中电科芯片技术(集团)有限公司,重庆400060 [2]厦门云天半导体科技有限公司,福建厦门361026

出　　处：《压电与声光》2024年第3期339-342,共4页Piezoelectrics & Acoustooptics

摘　　要：薄膜体声波滤波器(FBAR)作为一种无源、体积小和耐功率高的器件,被广泛应用于射频信号处理中。晶圆级气密封装作为小型化封装的代表,在各种高可靠性应用场景中占据重要地位。金-金键合和金-锡键合被广泛应用于薄膜体声波滤波器的气密性晶圆级封装中,但金-锡键合在工艺上更易实现。该文针对金-锡键合在气密性晶圆级封装中的应用进行了研究,在保证键合强度的情况下制作了3 GHz滤波器样品,其性能测试一致性良好,可靠性达到要求。As a passive,small-sized,and high-power-tolerant device,the film bulk acoustic resonator(FBAR)has been widely used in radio frequency signal processing.Wafer-level hermetic packaging represents miniaturized packaging and plays a critical role in various high-reliability applications.Both gold-gold and gold-tin bonding are widely used in FBAR hermetic wafer-level packaging.However,gold-tin bonding has a more straight forward implementation process.Therefore,this study investigates the application of gold-tin bonding in hermetic wafer-level packaging.Under the condition of ensuring bonding strength,3 GHz filter samples were produced.The experimental results demonstrated identical perfomances with all samples passing the reliability tests.

关 键 词：薄膜体声波滤波器 晶圆级封装 金锡键合 

分 类 号：TN384[电子电信—物理电子学] TN65TN305.94