单晶4H-SiC的摩擦诱导化学机械复合加工(FCMM)实验研究  

Experimental Study on Friction-induced Chemical-mechanical Composite Machining(FCMM)of 4H-SiC Single Crystal

作　　者：张博楠 黄辉[1,2] 武民 ZHANG Bonan;HUANG Hui;WU Min(National and Local Joint Engineering Research Center for Intelligent Manufacturing Technology of Brittle Material Products,Huaqiao University,Xiamen 361021;Institute of Manufacturing Engineering,Huaqiao University,Xiamen 361021)

机构地区：[1]华侨大学脆性材料产品智能制造技术国家地方联合工程研究中心,厦门361021 [2]华侨大学制造工程研究院,厦门361021

出　　处：《机械工程学报》2024年第7期401-410,共10页Journal of Mechanical Engineering

基　　金：国家自然科学基金(U22A20198);教育部创新团队滚动计划(IRT_17R41)资助项目。

摘　　要：单晶碳化硅(SiC)凭借其优异的材料性能成为下一代电力电子器件和光电子器件的优选衬底材料,但碳化硅的高硬脆性,强化学惰性对其高效精密加工带来了巨大挑战。提出一种基于摩擦诱导化学作用与低硬度磨粒机械作用复合的SiC晶片加工新思路。跟踪了4H-SiC在不同铁基烧结盘以及不同加工工艺参数下材料去除率随时间的变化;检测了加工后晶片的表面质量及亚表面损伤。实验结果表明摩擦诱导化学机械复合加工方法通过摩擦诱导实现金属与碳化硅的固相化学反应,并利用低硬度磨粒机械去除固相化学反应产物。加工后的亚表面中并未在纳米尺度下观察到晶体变形和晶格缺陷。加工初始阶段的材料去除率最高可达1025nm/min,稳定阶段的材料去除率最高可达385nm/min。工艺参数对加工过程中的固相化学反应速率有着重要的影响,低硬度磨粒实现对化学反应粘附物的机械去除,可以有效提高材料去除率。实验结果证实了本文提出的新型加工思路的可行性,其总体加工效率明显高于现有加工方法,为实现单晶SiC晶片的高效精密加工提供了新的研究思路。Single crystal silicon carbide(SiC)has become the preferred substrate for the next generation power electronic devices and optoelectronic devices due to its excellent material properties.However,the high hardness and brittleness of SiC and the enhanced chemical inertness have brought great challenges to its efficient precision machining.A new machining idea of SiC wafer based on the combination of friction induced chemical action and low hardness abrasive mechanical action was proposed.The material removal rate of 4H-SiC was tracked with time in different iron base sintered disks and different processing parameters.The surface quality and sub-surface damage of the fabricated wafer were measured.The experimental results show that the solid chemical reaction between metal and SiC can be achieved by friction induction and the solid chemical reaction product can be removed by low hardness abrasive.No crystal deformation and lattice defects were observed in the processed subsurface at nanometer scale.The maximum material removal rate in the initial processing stage is 1025 nm/min,and the maximum material removal rate in the stable stage is 385 nm/min.The process parameters have an important effect on the chemical reaction rate of solid phase in the process of processing.The low hardness abrasive can achieve mechanical removal of chemical reaction adhesion,which can effectively improve the material removal rate.The experimental results confirm the feasibility of the new machining idea proposed in this paper,and the overall machining efficiency is significantly higher than the existing machining methods,which provides a new research idea for realizing the high efficiency and precision machining of single crystal SiC wafers.

关 键 词：摩擦诱导 固相化学反应 化学机械复合加工 碳化硅 亚表面损伤 

分 类 号：TH161[机械工程—机械制造及自动化]