磁控共溅射W-Cu复合薄膜的工艺优化及性能研究  

Research on Process Optimization and Properties of W-Cu Composite Thin Films Deposited by Magnetron Co-sputtering

作　　者：郭中正 闫万珺 张殿喜 杨秀凡 蒋宪邦 周丹彤 Guo Zhongzheng;Yan Wanjun;Zhang Dianxi;Yang Xiufan;Jiang Xianbang;Zhou Dantong(School of Electronics and Information Engineering,Anshun University,Guizhou,561000)

机构地区：[1]安顺学院电子与信息工程学院,贵州561000

出　　处：《当代化工研究》2024年第11期160-163,共4页Modern Chemical Research

基　　金：贵州省教育厅青年科技人才成长项目“非混溶体系铜-钨薄膜结构均质化机理及力学行为研究”(项目编号:黔教合KY字〔2019〕145号)。

摘　　要：采用磁控共溅射沉积工艺,结合正交试验方法制备W-Cu复合薄膜。用扫描电子显微镜(SEM)观察W-Cu复合薄膜表面形貌,能谱仪(EDS)分析复合薄膜成分。微小力测试系统、纳米压痕仪及四探针仪分别测试复合薄膜的屈服强度σ_(0.2)、裂纹萌生临界应变ε_(c)、显微硬度H及电阻率ρ。结果表明,靶功率密度PD、溅射气压P及靶基距D_(TS)这三个工艺参数影响W-Cu复合薄膜的成分、沉积率、微观结构及力学和电学性能。优化的工艺参数为:PD=10 W/cm^(2)、P=2 Pa、D_(TS)=150 mm。该工艺条件下制备的W-Cu复合薄膜中Cu含量为42.2%(原子分数),沉积率6.6 nm/min。其性能为σ_(0.2)=0.86 GPa,ε_(c)=0.62%,H=7.35 GPa,ρ=19.6μΩ·cm。该复合膜微观结构呈均质化特征,W和Cu组元分布均匀。W-Cu composite thin films were prepared by magnetron co-sputtering deposition process and orthogonal experimental method.The surface morphology of W-Cu composite thin films were observed by using scanning electron microscope(SEM),the composition of the composite thin films were analyzed by energy dispersive spectrometer(EDS).The yield strengthσ_(0.2),critical strain of crack initiationε_(c),microhardness H and electrical resistivityρof the composite thin films were tested by microforce testing system,nanoindentor and four point probes,respectively.The results indicate that the composition,deposition rates,microstructures,mechanical and electrical properties of W-Cu composite thin films are influenced by three process parameters:target power density PD,sputtering pressure P and target to substrate distance D_(TS).The optimized process parameters are PD=10 W/cm^(2),P=2 Pa,D_(TS)=150 mm.The Cu content of the W-Cu composite thin film prepared under this process condition is 42.2%(atomic fraction),and the deposition rate is 6.6 nm/min.Its performance isσ_(0.2)=0.86 GPa,ε_(c)=0.62%,H=7.35 GPa,ρ=19.6μΩ·cm.The microstructure of the composite thin film exhibits homogenization characteristics,and the distribution of W and Cu components is uniform.

关 键 词：磁控共溅射 W-Cu复合薄膜 工艺优化 性能 

分 类 号：TG146.1[一般工业技术—材料科学与工程] TG146.4[金属学及工艺—金属材料]