氧化锰-氧化铪双层结构阻变存储器交叉阵列的研究  

Research on MnO/HfO_(2) bilayer resistive random access memory devices with crossbar array structure

作　　者：胡全丽 罗涵琼 苏旺 Hu Quanli;Luo Hanqiong;Su Wang(Nano Innovation Institute,Inner Mongolia Key Lab of Carbon Nanomaterials,College of Chemistry and Materials Science,Inner Mongolia Minzu University,Tongliao 028000)

机构地区：[1]内蒙古民族大学纳米创新研究院,内蒙古民族大学内蒙古自治区纳米碳材料重点实验室,内蒙古民族大学化学与材料学院,通辽028000

出　　处：《化工新型材料》2024年第S01期246-250,共5页New Chemical Materials

基　　金：国家自然科学基金地区项目(22261043);内蒙古自然科学基金青年项目(2022QN02016);内蒙古自治区高等学校科学技术研究自然科学重点项目(NJZZ22461);内蒙古民族大学博士启动基金项目(BS456)。

摘　　要：组建了具有5×5交叉阵列结构的Ag/MnO/HfO_(2)/Pt阻变存储器,研究了MnO和HfO_(2)双层结构的电阻转变特性。器件表现出高开关比、低操作电压和无电初始化等稳定的双极性电阻转变特性。电阻转变机制主要为欧姆传导和肖特基发射机制。证明了具有5×5交叉阵列结构的Ag/MnO/HfO_(2)/Pt器件有望成为一种有潜力的阻变存储器候选体系。Ag/MnO/HfO_(2)/Pt resistive random access memory(RRAM)devices with 5×5 crossbar array structure were constructed.The resistive switching characteristics of MnO/HfO_(2) bilayer structures were investigated.The device presented a stable bipolar resistive switching behavior with a high on/off ratio,low operating voltages,and forming-free process.The resistive switching mechanism was dominant by Ohmic conduction and Schottky emission mechanisms.It confirmed that the Ag/MnO/HfO_(2)/Pt devices with 5×5 crossbar array structure could be a potential candidate system for RRAM devices.

关 键 词：氧化锰 氧化铪 阻变存储器 交叉阵列 

分 类 号：TQ174[化学工程—陶瓷工业]