集成电路互连微纳米尺度硅通孔技术进展  

Advances in Micro-and Nano-Scale TSV Technology for Integrated Circuit Interconnecting

作　　者：黎科 张鑫硕 夏启飞 钟毅 于大全 LI Ke;ZHANG Xinshuo;XIA Qifei;ZHONG Yi;YU Daquan(School of Electronic Science and Engineering,Xiamen University,Xiamen 361005,China;College of Chemistry and Chemical Engineering,Xiamen University,Xiamen 361005,China;Xiamen Sky Semiconductor Technology Co.,Ltd.,Xiamen 361013,China)

机构地区：[1]厦门大学电子科学与技术学院,福建厦门361005 [2]厦门大学化学化工学院,福建厦门361005 [3]厦门云天半导体科技有限公司,福建厦门361013

出　　处：《电子与封装》2024年第6期109-118,共10页Electronics & Packaging

基　　金：国家自然科学基金(62104206);中央高校基本科研业务费专项资金(20720220072)。

摘　　要：集成电路互连微纳米尺度硅通孔(TSV)技术已成为推动芯片在“后摩尔时代”持续向高算力发展的关键。通过引入微纳米尺度高深宽比TSV结构,2.5D/3D集成技术得以实现更高密度、更高性能的三维互连。同时,采用纳米TSV技术实现集成电路背面供电,可有效解决当前信号网络与供电网络之间布线资源冲突的瓶颈问题,提高供电效率和整体性能。随着材料工艺和设备技术的不断创新,微纳米尺度TSV技术在一些领域取得了显著进展,为未来高性能、低功耗集成电路的发展提供了重要支持。综述了目前业界主流的微纳米尺度TSV技术,并对其结构特点和关键技术进行了分析和总结,同时探讨了TSV技术的发展趋势及挑战。The integrated circuit interconnecting micro-and nano-scale through silicon via(TSV)technology has become the key to driving chips to sustained high-computing power in the post-Moore's Law era.By introducing micro-and nano-scale high depth-to-width ratio TSV structures,the 2.5D/3D integration technology facilitates higher density,higher performance 3D interconnects.At the same time,the implementation of nano-scale TSV technology for backside power delivery in integrated circuits can effectively solve the bottleneck caused by wiring resource conflict between current signal and power delivery networks,and improve the power efficiency and overall performance.With continual innovations in material processes and equipment technologies,micro-and nano-scale TSV technology has made significant progress in some areas,offering critical support for the development of future high-performance and low-power integrated circuits.The current mainstream micro-and nano-scale TSV technologies in the industry are reviewed,and their structural characteristics and key technologies are analyzed and summarized,while the development trends and challenges of TSV technologies are discussed.

关 键 词：先进互连技术 2.5D/3D芯粒集成 背面供电 高深宽比TSV 

分 类 号：TN305.94[电子电信—物理电子学]