基于TSV的三维集成系统电热耦合仿真设计  

Electro-Thermal Coupling Simulation Design of 3D Integrated System Based on TSV

作　　者：王九如 朱智源 WANG Jiuru;ZHU Zhiyuan(College of Electronic and Information Engineering,Southwest University,Chongqing 400700,China)

机构地区：[1]西南大学电子信息工程学院,重庆400700

出　　处：《电子与封装》2024年第6期127-136,共10页Electronics & Packaging

摘　　要：三维集成系统利用垂直堆叠技术,实现高性能与低功耗,其中硅通孔(TSV)技术是三维互连成功实施的关键。TSV技术缩短互连距离,提升信号传输效率和电磁兼容性,但同时引发电热耦合问题,威胁三维集成电路性能的进一步提升。综述了基于TSV的三维集成电路中电热耦合现象的仿真设计进展,详细介绍了电气和热仿真设计方法,并探究了电热耦合问题的潜在影响及缓解策略。为理解和应对三维集成系统中的电热耦合挑战提供了系统的分析,并对未来研究方向提供了指导。Three-dimensional integrated system utilizes vertical stacking technology to achieve high performance and low power consumption,in which through-silicon via(TSV)technology is key to the successful implementation of three-dimensional interconnects.TSV technology shortens the interconnect distance and enhances signal transmission efficiency and electromagnetic compatibility,but it also leads to electro-thermal coupling issues,threatening further performance improvement of three-dimensional integrated circuits.Advances in the simulation design of electro-thermal coupling phenomena in three-dimensional integrated circuits based on TSV are summarized,the electrical and thermal simulation design methods are described in detail,and the potential impacts and mitigation strategies for electro-thermal coupling issues are explored.A systematic analysis is provided to understand and address the challenges of electro-thermal coupling in three-dimensional integrated systems,and guidance is provided for future research directions.

关 键 词：三维集成系统 硅通孔 电热耦合 

分 类 号：TN405.9[电子电信—微电子学与固体电子学]